High performance, flexible and room temperature grown amorphous Ga2O3 solar-blind photodetector with amorphous indium-zinc-oxide transparent conducting electrodes

In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al2O3 nanolaminate structure was investigated. The effects of the ultrathin Al2O3 layer and the thickness of Nd:IZO layer in the nanolaminate structure on the improvement of electrical performance and stability of thin film transistors (TFTs) were systematically studied. Besides the carrier movement confined along the near-channel region, driven by the Al2O3 layer under an electrical field, the high performance of the TFT is also attributed to the high quality of the 8-nm-thick Nd:IZO layer and the corresponding optimal Nd:IZO/Al2O3 interface, which reduce the scattering effect and charge trapping with strong M–O bonds in bulk and the back-channel surface of Nd:IZO, according to the X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and micro-wave photo conductivity decay (μ-PCD) results. As a result, the Nd:IZO/Al2O3 TFT exhibits an outstanding performance, with a high μsat of 32.7 cm2·V−1·s−1, an Ion/Ioff of 1.9 × 108, and a low subthreshold swing (SS) value of 0.33 V·dec−1, which shows great potential for the room temperature fabrication of TFTs in high-resolution or high-frame-rate displays by a scalable, simple, and feasible approach.

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Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors

RSC Advances ◽

10.1039/c4ra08548e ◽

2014 ◽

Vol 4 (86) ◽

pp. 45742-45748 ◽

Cited By ~ 13

Author(s):

Byeong-Geun Son ◽

So Yeon Je ◽

Hyo Jin Kim ◽

Jae Kyeong Jeong

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Zirconium Oxide ◽

High Performance ◽

Gate Insulator ◽

Indium Zinc Oxide

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The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽

10.3390/electronics10050631 ◽

2021 ◽

Vol 10 (5) ◽

pp. 631

Author(s):

Wei-Lun Huang ◽

Sheng-Po Chang ◽

Cheng-Hao Li ◽

Shoou-Jinn Chang

Keyword(s):

Zinc Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Wide Bandgap ◽

Visible Light Region ◽

Current Ratio ◽

Rejection Ratio ◽

Light Region ◽

Sputtering Power ◽

Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

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