scholarly journals The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 631
Author(s):  
Wei-Lun Huang ◽  
Sheng-Po Chang ◽  
Cheng-Hao Li ◽  
Shoou-Jinn Chang
Keyword(s):  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Wide Bandgap ◽  
Visible Light Region ◽  
Current Ratio ◽  
Rejection Ratio ◽  
Light Region ◽  
Sputtering Power ◽  
Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

scholarly journals Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Sheng-Po Chang ◽  
San-Syong Shih
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Excellent Performance ◽  
Current Ratio ◽  
Indium Zinc Oxide ◽  
Sputtering Power

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs). Co-sputtering-processedα-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition ofα-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricateα-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processedα-HfIZO TFTs were fabricated with an on/off current ratio of~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

Inkjet printing of homogeneous and green cellulose nanofibril dielectrics for high performance IGZO TFTs

2020 ◽  
Vol 8 (36) ◽  
pp. 12578-12586 ◽  
Author(s):  
Shangxiong Zhou ◽  
Jianhua Zhang ◽  
Xiaoping Guo ◽  
Honglong Ning ◽  
Dong Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Inkjet Printing ◽  
Thin Film Transistors ◽  
High Performance ◽  
Environmentally Friendly ◽  
Indium Gallium Zinc Oxide ◽  
Cellulose Nanofibril ◽  
Functional Nanomaterials ◽  
Indium Gallium

Inkjet printing of environmentally friendly functional nanomaterials for high performance indium–gallium–zinc oxide (IGZO) thin film transistors (TFTs) is highly in demand for the development of inexpensive and green electronics.

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

2019 ◽  
Vol 216 (18) ◽  
pp. 1900274 ◽  
Author(s):  
Dong Lin ◽  
Kaiwen Li ◽  
Jingjing Shao ◽  
Qun Zhang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Indium Zinc Oxide
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