Carrier transport and recombination dynamics of InAs/GaAs sub-monolayer quantum dot near infrared photodetector

2019 ◽  
Vol 52 (50) ◽  
pp. 505107 ◽  
Author(s):  
S Mukherjee ◽  
S Mukherjee ◽  
A Pradhan ◽  
T Maitra ◽  
S Sengupta ◽  
...  
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Vol 27 (6) ◽  
pp. 612-615 ◽  
Author(s):  
Haowei Wang ◽  
Zhixiao Li ◽  
Chunjie Fu ◽  
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...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Victor A. Krivenkov ◽  
Pavel Samokhvalov ◽  
Ivan Vasil’evskii ◽  
Nikolai Kargin ◽  
Igor Nabiev

Semiconductor quantum dots (QDs) are known for their high two-photon absorption (TPA) capacity. This allows them to efficiently absorb infrared photons with energies lower than the bandgap energy. Moreover, TPA...


2002 ◽  
Vol 13 (2-4) ◽  
pp. 301-304 ◽  
Author(s):  
L Chu ◽  
A Zrenner ◽  
D Bougeard ◽  
M Bichler ◽  
G Abstreiter

2001 ◽  
Vol 79 (14) ◽  
pp. 2249-2251 ◽  
Author(s):  
L. Chu ◽  
A. Zrenner ◽  
M. Bichler ◽  
G. Abstreiter

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Xiang Dong ◽  
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Traditional photodetectors usually respond to photons larger than the bandgap of a photosensitive material. In contrast to traditional photodetectors for broad-spectrum detection, the currently reported PbS/PMMA/PbSe CQDs silicon-based photodetectors can...


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Shu-Ting Chou ◽  
Shih-Yen Lin ◽  
Ru-Shang Hsiao ◽  
Jim-Yong Chi ◽  
Jyh-Shyang Wang ◽  
...  

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