Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode

2019 ◽  
Vol 53 (4) ◽  
pp. 045106
Author(s):  
Da-Hoon Lee ◽  
Daesung Kang ◽  
Tae-Yeon Seong ◽  
Michael Kneissl ◽  
Hiroshi Amano
Keyword(s):  
Light Emitting Diode ◽  
Electrical Characteristics ◽  
Light Emitting

Electrical characteristics of light-emitting diode based on poly(p-phenylenevinylene) derivatives: CzEH-PPV and OxdEH-PPV

2002 ◽  
Vol 130 (3) ◽  
pp. 279-283 ◽  
Author(s):  
H.S Kang ◽  
K.H Kim ◽  
M.S Kim ◽  
K.T Park ◽  
K.M Kim ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Electrical Characteristics ◽  
Light Emitting

Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

2011 ◽  
Vol 32 (6) ◽  
pp. 064007
Author(s):  
Enqing Guo ◽  
Zhiqiang Liu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Guohong Wang
Keyword(s):  
Light Emitting Diode ◽  
Electrical Characteristics ◽  
Light Emitting ◽  
Current Block ◽  
Block Layer

Characterization and Fabrication of InGaN-based Blue LED with Underlying AlGaN/GaN SLS Cladding Layer Grown on Si(111) Substrate

2009 ◽  
Vol 1167 ◽  
Author(s):  
Bin Abu Bakar Ahmad Shuhaimi ◽  
Chian Khai Pum ◽  
Takaaki Suzue ◽  
Yukiyasu Nomura ◽  
Takashi Egawa
Keyword(s):  
Light Emitting Diode ◽  
Xrd Analysis ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Surface Mapping ◽  
Light Emitting ◽  
Cladding Layer ◽  
Current Voltage ◽  
Strained Layer Superlattices ◽  
Multi Quantum Well

AbstractThis paper reports improved optical characteristics of InGaN-based light-emitting-diode (LED) grown on Si(111) substrate by the insertion of an Al0.06Ga0.94N/GaN strained-layer-superlattices (SLS) cladding layer after AlN/GaN multilayer (ML) growth, under the multi-quantum-well (MQW) active layer. The insertion of underlying Al0.06Ga0.94N/GaN SLS cladding layer has shown to improve epitaxial layer quality in x-ray diffraction (XRD) analysis, reduce wavelength peak fluctuations in photoluminescence (PL) surface mapping, and improve optical and electrical characteristics of the LED sample. A 34% increase of light intensity at 50 mA current injection and a narrower wavelength peak have been achieved by the insertion of Al0.06Ga0.94N/GaN SLS cladding layer. LED with underlying Al0.06Ga0.94N/GaN also shows superior current-voltage (I-V) characteristics with operation voltage of 3.2 V at 20 mA and series resistance of 16 Ω.

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