Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

2011 ◽  
Vol 32 (6) ◽  
pp. 064007
Author(s):  
Enqing Guo ◽  
Zhiqiang Liu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Guohong Wang
Keyword(s):  
Light Emitting Diode ◽  
Electrical Characteristics ◽  
Light Emitting ◽  
Current Block ◽  
Block Layer

Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode

2019 ◽  
Vol 53 (4) ◽  
pp. 045106
Author(s):  
Da-Hoon Lee ◽  
Daesung Kang ◽  
Tae-Yeon Seong ◽  
Michael Kneissl ◽  
Hiroshi Amano
Keyword(s):  
Light Emitting Diode ◽  
Electrical Characteristics ◽  
Light Emitting

Electrical characteristics of light-emitting diode based on poly(p-phenylenevinylene) derivatives: CzEH-PPV and OxdEH-PPV

2002 ◽  
Vol 130 (3) ◽  
pp. 279-283 ◽  
Author(s):  
H.S Kang ◽  
K.H Kim ◽  
M.S Kim ◽  
K.T Park ◽  
K.M Kim ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Electrical Characteristics ◽  
Light Emitting

Characterization and Fabrication of InGaN-based Blue LED with Underlying AlGaN/GaN SLS Cladding Layer Grown on Si(111) Substrate

2009 ◽  
Vol 1167 ◽  
Author(s):  
Bin Abu Bakar Ahmad Shuhaimi ◽  
Chian Khai Pum ◽  
Takaaki Suzue ◽  
Yukiyasu Nomura ◽  
Takashi Egawa
Keyword(s):  
Light Emitting Diode ◽  
Xrd Analysis ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Surface Mapping ◽  
Light Emitting ◽  
Cladding Layer ◽  
Current Voltage ◽  
Strained Layer Superlattices ◽  
Multi Quantum Well

AbstractThis paper reports improved optical characteristics of InGaN-based light-emitting-diode (LED) grown on Si(111) substrate by the insertion of an Al0.06Ga0.94N/GaN strained-layer-superlattices (SLS) cladding layer after AlN/GaN multilayer (ML) growth, under the multi-quantum-well (MQW) active layer. The insertion of underlying Al0.06Ga0.94N/GaN SLS cladding layer has shown to improve epitaxial layer quality in x-ray diffraction (XRD) analysis, reduce wavelength peak fluctuations in photoluminescence (PL) surface mapping, and improve optical and electrical characteristics of the LED sample. A 34% increase of light intensity at 50 mA current injection and a narrower wavelength peak have been achieved by the insertion of Al0.06Ga0.94N/GaN SLS cladding layer. LED with underlying Al0.06Ga0.94N/GaN also shows superior current-voltage (I-V) characteristics with operation voltage of 3.2 V at 20 mA and series resistance of 16 Ω.

Optimization of the Optical and Electrical Properties of GaN Vertical Light Emitting Diode with Current Block Layer

2012 ◽  
Vol 1396 ◽  
Author(s):  
Na Lu ◽  
Zhiqiang Liu ◽  
Enqing Guo ◽  
Liancheng Wang ◽  
Andrew Melton ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Output ◽  
Metal Electrode ◽  
Electrical Measurements ◽  
Light Emitting ◽  
Gan Led ◽  
Current Block ◽  
Current Blocking Layer ◽  
Current Densities ◽  
Current Blocking

ABSTRACTThe emission from a light emitting diode (LED) that is emitted under the metal electrode cannot escape into free space. A current blocking layer (CBL) is used to address this issue by forcing the current to flow laterally under the electrode reducing the emission absorbed and hence increasing the overall efficiency of the LED. In this paper a new method to fabricate Schottky and isolating CBLs in GaN LED are investigated. Optical and electrical measurements of these vertical LEDs with and without CBL show different light output powers at identical current densities. The results of this study indicate that CBLs could also be used to suppress the efficiency droop effect for GaN LEDs.

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