scholarly journals Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells

2021 ◽  
Author(s):  
Stephen A Church ◽  
George M Christian ◽  
Rachel May Barrett ◽  
Simon Hammersley ◽  
Menno J Kappers ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Si Doped ◽  
Photoluminescence Efficiency ◽  
Recombination Dynamics

Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers

2001 ◽  
Vol 118 (11) ◽  
pp. 547-551 ◽  
Author(s):  
Mee-Yi Ryu ◽  
Phil Won Yu ◽  
Eunsoon Oh ◽  
Chulsoo Sone ◽  
Okhyun Nam ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Si Doped ◽  
Recombination Dynamics

Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JL12
Author(s):  
Tom J. Badcock ◽  
Phil Dawson ◽  
Rachel A. Oliver ◽  
Menno J. Kappers ◽  
Colin J. Humphreys
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Recombination Dynamics

scholarly journals TRANSIENT DECAY OF PHOTOEXCITED CARRIERS AND PHOTOLUMINESCENCE EFFICIENCY IN QUANTUM WELLS

1997 ◽  
Vol 46 (5) ◽  
pp. 1001
Author(s):  
JIN SHI-RONG ◽  
LI AI-ZHEN ◽  
CHU JUN-HAO ◽  
CHEN SHI-WEI
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Efficiency

Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wells

2004 ◽  
Vol 36 (4-6) ◽  
pp. 615-624 ◽  
Author(s):  
N. Armani ◽  
F. Rossi ◽  
C. Ferrari ◽  
L. Lazzarini ◽  
A. Vinattieri ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Polarization Field ◽  
Field Effects ◽  
Recombination Dynamics

scholarly journals Plasma reflection from highly Si-doped InGaAs∕AlAsSb quantum wells

2010 ◽  
Author(s):  
Shin-ichiro Gozu ◽  
Teruo Mozume ◽  
Hiroshi Ishikawa ◽  
Marília Caldas ◽  
Nelson Studart
Keyword(s):  
Quantum Wells ◽  
Si Doped ◽  
Plasma Reflection
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