Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells

ABSTRACTRecombination dynamics of InGaN/GaN multiple quantum wells (MQWs) with different well thickness have been studied. From the behaviour of temperature dependent photoluminescence, we find that the activation energy decreases with the well thickness increasing. In addition, with temperature changing from 10K to room temperature, the “W” shape of full width of half maximum is also thickness related, and it becomes more obvious with the well thickness increasing. These results indicate that the dominant recombination dynamics change from exciton localization to quantum confined stark effect with well thickness increasing. From our measurement, the InGaN/GaN MQWs with 3nm thickness seems a turning point, which shows the best optimized optical and structural properties.

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Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

Physics Letters A ◽

10.1016/j.physleta.2018.02.035 ◽

2018 ◽

Vol 382 (17) ◽

pp. 1181-1184 ◽

Cited By ~ 2

Author(s):

Lihua Teng ◽

Tianran Jiang ◽

Xia Wang ◽

Tianshu Lai

Keyword(s):

Quantum Wells ◽

Spin Polarization ◽

Spin Relaxation ◽

Relaxation Mechanism ◽

Carrier Recombination ◽

Recombination Dynamics

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Temperature-dependent recombination dynamics and electroluminescence characteristics of colloidal CdSe/ZnS core/shell quantum dots

Applied Physics Letters ◽

10.1063/5.0057449 ◽

2021 ◽

Vol 119 (7) ◽

pp. 073303

Author(s):

Jialin Wu ◽

Lixiang Chen ◽

Yongshuang Zhao ◽

Zuhong Xiong ◽

Wenyu Ji ◽

...

Keyword(s):

Quantum Dots ◽

Core Shell ◽

Temperature Dependent ◽

Recombination Dynamics

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Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift

Nanotechnology ◽

10.1088/0957-4484/23/46/465708 ◽

2012 ◽

Vol 23 (46) ◽

pp. 465708 ◽

Cited By ~ 16

Author(s):

M De Seta ◽

G Capellini ◽

M Ortolani ◽

M Virgilio ◽

G Grosso ◽

...

Keyword(s):

Quantum Wells ◽

Intersubband Transitions ◽

Temperature Dependent ◽

Absorption Energy ◽

Terahertz Absorption

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Experimental Observation of Temperature-Driven Topological Phase Transition in HgTe/CdHgTe Quantum Wells

10.20944/preprints201901.0295.v1 ◽

2019 ◽

Author(s):

Maksim Zholudev ◽

Aleksandr Kadykov ◽

Mikhail Fadeev ◽

Michal Marcinkiewicz ◽

Sandra Ruffenach ◽

...

Keyword(s):

Magnetic Field ◽

Phase Transition ◽

Quantum Wells ◽

Topological Insulator ◽

Critical Magnetic Field ◽

Topological Phase ◽

Temperature Dependent ◽

Transition Parameter ◽

Topological Phase Transition ◽

Band Insulator

We report on comparison between temperature-dependent magneto¬absorption and magnetotransport spectroscopy of HgTe/CdHgTe quantum wells in terms of detection of phase transition between topological insulator and band insulator states. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases, yet magnetotransport method is shown to have advantages for clear manifestation of the phase transition with accurate quantitative values of transition parameter (i.e. critical magnetic field Bc).

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