Investigation of tunneling current and local contact potential difference on the TiO2(110) surface by AFM/KPFM at 78 K

2017 ◽  
Vol 28 (10) ◽  
pp. 105704 ◽  
Author(s):  
Huan Fei Wen ◽  
Yan Jun Li ◽  
Eiji Arima ◽  
Yoshitaka Naitoh ◽  
Yasuhiro Sugawara ◽  
...  
Keyword(s):  
Contact Potential Difference ◽  
Tunneling Current ◽  
Potential Difference ◽  
Contact Potential ◽  
Local Contact

scholarly journals Multi-Channel Exploration of O Adatom on TiO2(110) Surface by Scanning Probe Microscopy

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1506
Author(s):  
Huan Fei Wen ◽  
Yasuhiro Sugawara ◽  
Yan Jun Li
Keyword(s):  
Charge Transfer ◽  
Scanning Probe Microscopy ◽  
Contact Potential Difference ◽  
Tunneling Current ◽  
Potential Difference ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Contact Potential ◽  
Probe Microscopy ◽  
Local Contact

We studied the O2 dissociated state under the different O2 exposed temperatures with atomic resolution by scanning probe microscopy (SPM) and imaged the O adatom by simultaneous atomic force microscopy (AFM)/scanning tunneling microscopy (STM). The effect of AFM operation mode on O adatom contrast was investigated, and the interaction of O adatom and the subsurface defect was observed by AFM/STM. Multi-channel exploration was performed to investigate the charge transfer between the adsorbed O and the TiO2(110) by obtaining the frequency shift, tunneling current and local contact potential difference at an atomic scale. The tunneling current image showed the difference of the tunneling possibility on the single O adatom and paired O adatoms, and the local contact potential difference distribution of the O-TiO2(110) surface institutively revealed the charge transfer from TiO2(110) surface to O adatom. The experimental results are expected to be helpful in investigating surface/interface properties by SPM.

Determination of the local contact potential difference of PTCDA on NaCl: a comparison of techniques

2009 ◽  
Vol 20 (26) ◽  
pp. 264012 ◽  
Author(s):  
S A Burke ◽  
J M LeDue ◽  
Y Miyahara ◽  
J M Topple ◽  
S Fostner ◽  
...  
Keyword(s):  
Contact Potential Difference ◽  
Potential Difference ◽  
Contact Potential ◽  
Local Contact ◽  
Comparison Of Techniques

scholarly journals Local contact potential difference of molecular self-assemblies investigated by Kelvin probe force microscopy

2011 ◽  
Vol 99 (23) ◽  
pp. 233102 ◽  
Author(s):  
Evan J. Spadafora ◽  
Mathieu Linares ◽  
Wan Zaireen Nisa Yahya ◽  
Frédéric Lincker ◽  
Renaud Demadrille ◽  
...  
Keyword(s):  
Contact Potential Difference ◽  
Kelvin Probe Force Microscopy ◽  
Potential Difference ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Force Microscopy ◽  
Local Contact

scholarly journals Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1803
Author(s):  
Zhen Zheng ◽  
Junyang An ◽  
Ruiling Gong ◽  
Yuheng Zeng ◽  
Jichun Ye ◽  
...  
Keyword(s):  
Structural Changes ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Contact Potential Difference ◽  
Potential Difference ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Carrier Lifetimes ◽  
Transmission Electron ◽  
Effective Carrier

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

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