High aspect ratio silicon nanowires control fibroblast adhesion and cytoskeleton organization

2017 ◽  
Vol 28 (15) ◽  
pp. 155102 ◽  
Author(s):  
Laura Andolfi ◽  
Anna Murello ◽  
Damiano Cassese ◽  
Jelena Ban ◽  
Simone Dal Zilio ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Control Fibroblast ◽  
Cytoskeleton Organization ◽  
Fibroblast Adhesion

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Semiconductor Device ◽  
Imprint Lithography ◽  
Wafer Level ◽  
Conventional Photolithography ◽  
Metal Assisted Chemical Etching

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

Nanofabrication of silicon nanowires with high aspect ratio for photo-electron sensing

2018 ◽  
Vol 195 ◽  
pp. 139-144 ◽  
Author(s):  
Bo Feng ◽  
Jianan Deng ◽  
Bingrui Lu ◽  
Chen Xu ◽  
Yiwen Wang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio

Optical properties of high aspect ratio plasma etched silicon nanowires: fabrication-induced variability dramatically reduces reflectance

2015 ◽  
Vol 26 (8) ◽  
pp. 085301 ◽  
Author(s):  
A Smyrnakis ◽  
E Almpanis ◽  
V Constantoudis ◽  
N Papanikolaou ◽  
E Gogolides
Keyword(s):  
Optical Properties ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Etched Silicon

Densely Packed Arrays of Ultra-High-Aspect-Ratio Silicon Nanowires Fabricated using Block-Copolymer Lithography and Metal-Assisted Etching

2009 ◽  
Vol 19 (15) ◽  
pp. 2495-2500 ◽  
Author(s):  
Shih-Wei Chang ◽  
Vivian P. Chuang ◽  
Steven T. Boles ◽  
Caroline A. Ross ◽  
Carl V. Thompson
Keyword(s):  
Block Copolymer ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Block Copolymer Lithography ◽  
Copolymer Lithography

Raman Spectra of High Aspect Ratio Double- and Single-Clamped Silicon Nanowires

2010 ◽  
Author(s):  
Hang Chen ◽  
Craig Keasler ◽  
Anna Swan ◽  
Ozgur Ozsun ◽  
P. M. Champion ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Raman Spectra ◽  
Silicon Nanowires ◽  
High Aspect Ratio

Large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route

2016 ◽  
Vol 122 (2) ◽  
Author(s):  
Halldor Gudfinnur Svavarsson ◽  
Birgir Hrafn Hallgrimsson ◽  
Manoj Niraula ◽  
Kyu Jin Lee ◽  
Robert Magnusson
Keyword(s):  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Top Down

Characteristics of Silicon Nanowire Field Electron Emission

2013 ◽  
Vol 652-654 ◽  
pp. 654-658 ◽  
Author(s):  
Hsin Luen Tsai
Keyword(s):  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Electron Emission ◽  
High Aspect Ratio ◽  
Silicon Nanowire ◽  
Eutectic Point ◽  
Field Electron Emission ◽  
Promising Alternative ◽  
Turn On ◽  
Field Electron

Silicon nanowires with fine tip curvature and high aspect ratio are the promising alternative as the electron emitter to promote field electron emission characteristics. The fabrication of silicon nanowires based on the vapor-liquid-solid (VLS) mechanism was performed in the low pressure chemical vapor deposition chamber in the present work. The gold has its lower eutectic point than other materials and deposited on silicon wafer as the catalyst for silicon nanowire synthesis. The structural properties of the nanowires, including number density, size, aspect ratio and tapering geometry, were optimized by various experimental recipes. The results showed that the low turn-on filed of the nanowire was comparable with the published materials. The 1.2 V/μm low turn-on field was detected from the silicon nanowires which have high aspect ratio and tapered tip emitter when the silicon nanowires were synthesized under the reaction conditions at 620 °C grown for 60 minutes with silane and nitrogen flow rates at 100 SCCM.

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