EXIRAD-HE: multi-pinhole high-resolution ex vivo imaging of high-energy isotopes

It is possible to produce metallic materials with submicrometer-grained (SMG) structures by imposing an intense plastic strain under quasi-hydrostatic pressure. Studies using conventional transmission electron microscopy (CTEM) showed that many grain boundaries in the SMG structures appeared diffuse in nature with poorly defined transition zones between individual grains. The implication of the CTEM observations is that the grain boundaries of the SMG structures are in a high energy state, having non-equilibrium character. It is anticipated that high-resolution electron microscopy (HREM) will serve to reveal a precise nature of the grain boundary structure in SMG materials. A recent study on nanocrystalline Ni and Ni3Al showed lattice distortion and dilatations in the vicinity of the grain boundaries. In this study, HREM observations are undertaken to examine the atomic structure of grain boundaries in an SMG Al-based Al-Mg alloy.An Al-3%Mg solid solution alloy was subjected to torsion straining to produce an equiaxed grain structure with an average grain size of ~0.09 μm.

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Ultra high resolution SEM at high voltage images individual fab fragments applied as molecular label to cell surface receptors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010015232x ◽

1989 ◽

Vol 47 ◽

pp. 70-71

Author(s):

Klaus-Ruediger Peters

Keyword(s):

High Resolution ◽

High Energy ◽

Metal Coating ◽

Beam Diameter ◽

Surface Receptors ◽

Surface Mobility ◽

Metal Atoms ◽

Shadowing Effect ◽

Imaging Mode ◽

Deposition Techniques

Topographic ultra high resolution can now routinely be established on bulk samples in cold field emission scanning electron microscopy with a second generation of microscopes (FSEM) designed to provide 0.5 nm probe diameters. If such small probes are used for high magnification imaging, topographic contrast is so high that remarkably fine details can be imaged on 2DMSO/osmium-impregnated specimens at ribosome surfaces even without a metal coating. On TCH/osmium-impregnated specimens topographic resolution can be increased further if the SE-I imaging mode is applied. This requires that beam diameter and metal coating thickness be made smaller than the SE range of ~1 nm and background signal contributions be reduced. Subnanometer small probes can be obtained (only) at high accelerating voltages. Subnanometer thin continuous metal films can be produced under the following conditions: self-shadowing effect between metal atoms must be reduced through appropriate deposition techniques and surface mobility of metal atoms must be diminished through high energy sputtering and/or specimen cooling.

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Ex vivo analysis of microstructural bone parameters in tibia and femur in diabetes mellitus using high-resolution peripheral quantitative computed tomography

10.1055/s-0039-1700646 ◽

2019 ◽

Author(s):

EM Wölfel ◽

AK Siebels ◽

H Mushumba ◽

B Wulff ◽

K Püschel ◽

...

Keyword(s):

Diabetes Mellitus ◽

Computed Tomography ◽

High Resolution ◽

Ex Vivo ◽

Quantitative Computed Tomography ◽

Peripheral Quantitative Computed Tomography ◽

Bone Parameters

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Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

MRS Proceedings ◽

10.1557/proc-639-g3.44 ◽

2000 ◽

Vol 639 ◽

Cited By ~ 1

Author(s):

Philomela Komninou ◽

Joseph Kioseoglou ◽

Eirini Sarigiannidou ◽

George P. Dimitrakopulos ◽

Thomas Kehagias ◽

...

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Stacking Faults ◽

High Resolution Electron Microscopy ◽

High Energy ◽

Low Energy ◽

Inversion Domain ◽

Resolution Electron ◽

Domain Boundaries ◽

Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

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