Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region
2008 ◽
Vol 2
(3)
◽
pp. 347
◽
1988 ◽
Vol 49
(C4)
◽
pp. C4-651-C4-655
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Keyword(s):
2014 ◽
Vol 778-780
◽
pp. 841-844
◽
Keyword(s):
2016 ◽
Vol 63
(5)
◽
pp. 1969-1976
◽
Keyword(s):