Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR

2019 ◽  
Vol 35 (1) ◽  
pp. 015009 ◽  
Author(s):  
V V Zolotarev ◽  
A Yu Leshko ◽  
V V Shamakhov ◽  
D N Nikolaev ◽  
V S Golovin ◽  
...  
Keyword(s):  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gaas Laser

Neutron effects in high-power GaAs laser diodes

1989 ◽  
Vol 36 (6) ◽  
pp. 2076-2082 ◽  
Author(s):  
R.F. Carson ◽  
W.W. Chow
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Gaas Laser

Theoretical investigation of minority carrier leakages of high‐power 0.8 μm InGaAsP/InGaP/GaAs laser diodes

1994 ◽  
Vol 65 (18) ◽  
pp. 2260-2262 ◽  
Author(s):  
J. Diaz ◽  
I. Eliashevich ◽  
H. Yi ◽  
X. He ◽  
M. Stanton ◽  
...  
Keyword(s):  
Theoretical Investigation ◽  
High Power ◽  
Minority Carrier ◽  
Laser Diodes ◽  
Gaas Laser

High-Power Continuous-Wave Operation of BeZnCdSe Single-Quantum-Well Green Laser Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062101 ◽  
Author(s):  
Sumiko Fujisaki ◽  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Shigehisa Tanaka ◽  
Shinji Tsuji ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Green Laser ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Continuous Wave Operation

Continuous-wave 15-mW operation test of single-mode high-power crank structure TJS laser diodes

1981 ◽  
Vol 17 (12) ◽  
pp. 2506-2507 ◽  
Author(s):  
H. Kumabe ◽  
S. Nita ◽  
Y. Seiwa ◽  
T. Tanaka ◽  
T. Sogo ◽  
...  
Keyword(s):  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Single Mode ◽  
Operation Test

Facet heating and axial temperature profiles in high-power GaAlAs/GaAs laser diodes

1998 ◽  
Vol 38 (5) ◽  
pp. 821-825 ◽  
Author(s):  
U. Menzel ◽  
R. Puchert ◽  
A. Bärwolff ◽  
A. Lau
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Temperature Profiles ◽  
Axial Temperature ◽  
Gaas Laser

400-nm Band AlGaInN-Based High Power Laser Diodes

2001 ◽  
Vol 693 ◽  
Author(s):  
Takeharu Asano ◽  
Motonobu Takeya ◽  
Tsuyoshi Tojyo ◽  
Shinro Ikeda ◽  
Takashi Mizuno ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Active Layer ◽  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Direct Result ◽  
Electron Blocking Layer ◽  
Low Dislocation Density ◽  
Operating Current

AbstractHigh-power AlGaInN-based laser diodes (LDs) operating with high reliability in the 400-nm band have been successfully fabricated using a high-productivity process. Epitaxial lateral overgrowth (ELO) over a 10-m m region was employed to obtain a broad growth area with low dislocation density, and the thickness of the ELO-GaN layer was limited to approximately 5 m in order to minimize wafer bending. These techniques allow for the easy and reproducible alignment of the laser stripe on the region of low dislocation density. The insertion of a GaInN interlayer between the active layer and the AlGaN electron blocking layer was effective for reducing the strain between these two layers, resulting in homogeneous luminescence from the active layer and lower operating current. A mean time to failure of 15000 h under 30-mW continuous-wave operation at 60°C was realized as a direct result of the lower operating current. Productivity was remarkably improved by performing epitaxial growth on a 3-inch substrate. Highly uniform laser wafers were successfully fabricated by achieving minimal temperature variation (1000 ±7°C) over the 3-inch substrate. The resultant laser structures varied in thickness by only ±5%, and the photoluminescence wavelength was consistent within ±2.5 nm over the entire 3-inch substrate. The average threshold current of 550 LDs selected from a fourth wafer was 32.7 mA, with small standard deviation of 3.2 mA.

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