Novel Omega-Gate heterojunction tunneling FET with a new analytical model

Semiconductor Science and Technology ◽

10.1088/1361-6641/abf665 ◽

2021 ◽

Author(s):

Yihong Qing ◽

Te-Kuang Chiang ◽

Lin Wang ◽

Feibo Du ◽

Tiantian Xie ◽

...

Keyword(s):

Analytical Model ◽

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A Pseudo-2-D-Analytical Model of Dual Material Gate All-Around Nanowire Tunneling FET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2321977 ◽

2014 ◽

Vol 61 (7) ◽

pp. 2264-2270 ◽

Keyword(s):

Analytical Model ◽

Tunneling Fet ◽

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2-D Analytical Model for the Threshold Voltage of a Tunneling FET With Localized Charges

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2332039 ◽

2014 ◽

Vol 61 (9) ◽

pp. 3054-3059 ◽

Author(s):

Rajat Vishnoi ◽

M. Jagadesh Kumar

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

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A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure

Journal of Semiconductors ◽

10.1088/1674-4926/40/12/122901 ◽

2019 ◽

Vol 40 (12) ◽

pp. 122901

Author(s):

C. Usha ◽

P. Vimala

Keyword(s):

Analytical Model ◽

Double Gate ◽

Two Dimensional ◽

Electrical Characteristics ◽

Tunneling Fet ◽

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Two dimensional analytical model for the threshold voltage of a Gate All Around Nanowire tunneling FET with localized charges

2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) ◽

10.1109/nano.2015.7388723 ◽

2015 ◽

Author(s):

Rajat Vishnoi ◽

M. Jagadesh Kumar

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

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An Analytical Model of Gate-All-Around Heterojunction Tunneling FET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2783911 ◽

2018 ◽

Vol 65 (2) ◽

pp. 776-782 ◽

Author(s):

Yunhe Guan ◽

Zunchao Li ◽

Wenhao Zhang ◽

Yefei Zhang ◽

Feng Liang

Keyword(s):

Analytical Model ◽

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An analytical model for conflict dynamics

Journal of the Operational Research Society ◽

10.1038/sj.jors.2600396 ◽

1997 ◽

Vol 48 (10) ◽

pp. 978-987

Author(s):

N Gass

Keyword(s):

Analytical Model

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Simple quasi-two-dimensional analytical model to characterise the electric field in an LDD MOSFET

IEE Proceedings G Circuits Devices and Systems ◽

10.1049/ip-g-2.1990.0044 ◽

1990 ◽

Vol 137 (4) ◽

pp. 291

Author(s):

R.H. Patel ◽

D.-L. Kwong ◽

N. Herr

Keyword(s):

Electric Field ◽

Analytical Model ◽

Two Dimensional

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ANALYTICAL MODEL OF SUPEREXCHANGE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19888414 ◽

1988 ◽

Vol 49 (C8) ◽

pp. C8-911-C8-912

Author(s):

Yu. V. Rakitin ◽

V. T. Kalinnikov

Keyword(s):

Analytical Model

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Analytical Model for Determining the Effective Size of an Evaporation Region in Pulsed Laser Ablation

Прикладная механика и техническая физика ◽

10.15372/pmtf20180509 ◽

2018 ◽

Keyword(s):

Laser Ablation ◽

Analytical Model ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Effective Size ◽

Evaporation Region

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Coding Algorithm for Grayscale Images – Design of Piecewise Uniform Quantizer with Golomb–Rice Code and Novel Analytical Model for Performance Analysis

Informatica ◽

10.15388/informatica.2017.152 ◽

2017 ◽

Vol 28 (4) ◽

pp. 703-724 ◽

Author(s):

Nikola Simić ◽

Zoran H. Perić ◽

Milan S. Savić

Keyword(s):

Performance Analysis ◽

Analytical Model ◽

Grayscale Images

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