A Pseudo-2-D-Analytical Model of Dual Material Gate All-Around Nanowire Tunneling FET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2321977 ◽

2014 ◽

Vol 61 (7) ◽

pp. 2264-2270 ◽

Keyword(s):

Analytical Model ◽

Tunneling Fet ◽

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Novel Omega-Gate heterojunction tunneling FET with a new analytical model

Semiconductor Science and Technology ◽

10.1088/1361-6641/abf665 ◽

2021 ◽

Author(s):

Yihong Qing ◽

Te-Kuang Chiang ◽

Lin Wang ◽

Feibo Du ◽

Tiantian Xie ◽

...

Keyword(s):

Analytical Model ◽

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A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

Chinese Physics B ◽

10.1088/1674-1056/23/11/118505 ◽

2014 ◽

Vol 23 (11) ◽

pp. 118505 ◽

Author(s):

Shweta Tripathi

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

Short Channel ◽

Channel Potential ◽

Dual Material ◽

Lightly Doped Drain

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

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New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074304 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074304 ◽

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

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2-D Analytical Model for the Threshold Voltage of a Tunneling FET With Localized Charges

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2332039 ◽

2014 ◽

Vol 61 (9) ◽

pp. 3054-3059 ◽

Author(s):

Rajat Vishnoi ◽

M. Jagadesh Kumar

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

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An analytical model for submicron dual material gate GaNMESFET including the temperature effects

2017 International Conference on Green Energy Conversion Systems (GECS) ◽

10.1109/gecs.2017.8066258 ◽

2017 ◽

Author(s):

Nacereddine Lakhdar ◽

Brahim Lakehal

Keyword(s):

Analytical Model ◽

Temperature Effects ◽

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Analytical model for the threshold voltage of dual material gate (DMG) partially depleted SOI MOSFET and evidence for reduced short-channel effects

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1436745 ◽

2005 ◽

Author(s):

M. Jagidesh Kumar ◽

G. Venkateshwar Reddy

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

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Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

Chinese Physics B ◽

10.1088/1674-1056/21/4/048501 ◽

2012 ◽

Vol 21 (4) ◽

pp. 048501 ◽

Author(s):

Cong Li ◽

Yi-Qi Zhuang ◽

Li Zhang ◽

Jun-Lin Bao

Keyword(s):

Analytical Model ◽

Gate Dielectric ◽

Lowering Effect ◽

Surrounding Gate ◽

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Compact Analytical Model of Dual Material Gate Tunneling Field-Effect Transistor Using Interband Tunneling and Channel Transport

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2315294 ◽

2014 ◽

Vol 61 (6) ◽

pp. 1936-1942 ◽

Author(s):

Rajat Vishnoi ◽

M. Jagadesh Kumar

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Channel Transport ◽

Interband Tunneling ◽

Effect Transistor ◽

Gate Tunneling ◽

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Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo

Acta Physica Sinica ◽

10.7498/aps.62.158502 ◽

2013 ◽

Vol 62 (15) ◽

pp. 158502

Author(s):

Xin Yan-Hui ◽

Liu Hong-Xia ◽

Fan Xiao-Jiao ◽

Zhuo Qing-Qing

Keyword(s):

Analytical Model ◽

Two Dimensional ◽

Strained Si ◽

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