Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal–oxide–semiconductor field-effect transistors

2017 ◽  
Vol 26 (12) ◽  
pp. 127302 ◽  
Author(s):  
Yan-Bing Xu ◽  
Hong-Guan Yang
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Extraction Method ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Capacitance Extraction

Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

2001 ◽  
Vol 40 (Part 2, No. 7B) ◽  
pp. L721-L723 ◽  
Author(s):  
Atsushi Kohno ◽  
Hideki Murakami ◽  
Mitsuhisa Ikeda ◽  
Seiichi Miyazaki ◽  
Masataka Hirose
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Silicon Quantum Dot

Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

2012 ◽  
Vol 51 ◽  
pp. 04DC06
Author(s):  
Wei Feng ◽  
Ranga Hettiarachchi ◽  
Soshi Sato ◽  
Kuniyuki Kakushima ◽  
Masaaki Niwa ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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