Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal–Oxide–Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process

2010 ◽  
Vol 49 (8) ◽  
pp. 084203 ◽  
Author(s):  
Jae Hyun Park ◽  
Jae Young Song ◽  
Jong Pil Kim ◽  
Sang Wan Kim ◽  
Jang-Gn Yun ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Optical Lithography ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Lithography Process

Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

2012 ◽  
Vol 51 ◽  
pp. 04DC06
Author(s):  
Wei Feng ◽  
Ranga Hettiarachchi ◽  
Soshi Sato ◽  
Kuniyuki Kakushima ◽  
Masaaki Niwa ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors

2008 ◽  
Vol 47 (4) ◽  
pp. 3277-3281 ◽  
Author(s):  
Eu Jin Tan ◽  
Kin Leong Pey ◽  
Navab Singh ◽  
Dong-Zhi Chi ◽  
Guo-Qiang Lo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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