High-efficiency asymmetric diffraction based on PT-antisymmetry in quantum dot molecules

2021 ◽  
Author(s):  
Guangling Cheng ◽  
Yongsheng Hu ◽  
Wenxue Zhong ◽  
Aixi Chen
2006 ◽  
Vol 959 ◽  
Author(s):  
Wipakorn Jevasuwan ◽  
Supachok Thainoi ◽  
Songphol Kanjanachuchai ◽  
Somchai Ratanathammaphan ◽  
Somsak Panyakeow

ABSTRACTSelf-assembled InAs and InP quantum dot molecules (QDMs) are grown on GaAs substrates using different molecular beam epitaxial (MBE) growth techniques. The structural and optical properties of the two types of QDMs are then compared and reported. Multi-stack high-density (1012 cm-2) InAs QDMs are grown and when inserted into GaAlAs/GaAs heterostructure results in high-efficiency solar cells. As an alternative to InAs, InP QDMs are grown by droplet epitaxy of In and annealing under P2 pressure. While the number of quantum dots per QDM in the case of InP is in the range of 10 to 12 dots, those in the case of InAs can be smaller or much larger depending on exact growth parameters prior to QD growth. Photoluminescence (PL) measurements show that while InAs QDMs provide room-temperature optical output that peaks at 1.1 eV, InP QDMs have no PL output, possibly due to crystal defects created by low-temperature processing associated with droplet epitaxy. Discussion on the practicality of our QDMs as material for intermediate band solar cells is also provided.


Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1201
Author(s):  
Dan Dalacu ◽  
Philip J. Poole ◽  
Robin L. Williams

For nanowire-based sources of non-classical light, the rate at which photons are generated and the ability to efficiently collect them are determined by the nanowire geometry. Using selective-area vapour-liquid-solid epitaxy, we show how it is possible to control the nanowire geometry and tailor it to optimise device performance. High efficiency single photon generation with negligible multi-photon emission is demonstrated using a quantum dot embedded in a nanowire having a geometry tailored to optimise both collection efficiency and emission rate.


2021 ◽  
Vol 124 ◽  
pp. 105614
Author(s):  
S. Tilouche ◽  
A. Sayari ◽  
M. Omri ◽  
S. Souilem ◽  
L. Sfaxi ◽  
...  

2004 ◽  
Vol 85 (2) ◽  
pp. 284-286 ◽  
Author(s):  
V. G. Talalaev ◽  
J. W. Tomm ◽  
N. D. Zakharov ◽  
P. Werner ◽  
B. V. Novikov ◽  
...  

2016 ◽  
Vol 4 (21) ◽  
pp. 8161-8171 ◽  
Author(s):  
Chandu V. V. M. Gopi ◽  
Mallineni Venkata-Haritha ◽  
Young-Seok Lee ◽  
Hee-Je Kim

Metal sulfide decorated with ZnO NRs (ZnO/CoS, ZnO/NiS, ZnO/CuS and ZnO/PbS) were fabricated and used as efficient CEs for QDSSCs.


2015 ◽  
Vol 169 ◽  
pp. 103-108 ◽  
Author(s):  
Ling Li ◽  
Junying Xiao ◽  
Xichuan Yang ◽  
Wenming Zhang ◽  
Huayan Zhang ◽  
...  

2014 ◽  
Vol 136 (25) ◽  
pp. 9203-9210 ◽  
Author(s):  
Zhenxiao Pan ◽  
Iván Mora-Seró ◽  
Qing Shen ◽  
Hua Zhang ◽  
Yan Li ◽  
...  

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