Fabrication of large UV transmission blazed gratings for slitless spectral sky survey

2022 ◽  
Vol 21 (12) ◽  
pp. 307
Author(s):  
Zhi-Wen Chen ◽  
Mao-Qi Cai ◽  
Ke-Qiang Qiu ◽  
Ya-Nan Wang ◽  
Huo-Yao Chen ◽  
...  
Keyword(s):  
Structural Parameters ◽  
Ion Beam ◽  
Stray Light ◽  
Narrow Slit ◽  
Ion Beam Etching ◽  
Blazed Grating ◽  
Large Size ◽  
International Astronomical ◽  
Sky Survey ◽  
Photoresist Mask

Abstract Slitless spectral sky survey is a critical direction of international astronomical research. Compared with ground-based sky survey, space-based sky survey can achieve full-band observation, and its imaging quality and resolution capability are restricted by the efficiency and size of dispersive elements. Transmission blazed gratings are often used as the dispersive elements in the UV band. Holographic interference lithography produces the photoresist mask of a grating, and the ion beam etching vertically transfers the pattern to the substrate to form the SiO2 mask of a grating. To reduce the effect of ion beam divergence on the uniformity of the groove shape, the grating mask is etched tilted by the ion beam passing through a narrow slit to obtain a blazed grating with consistent structural parameters. Moreover, two-dimensional scanning of the sample stage enables the etching of large-size samples. A UV transmission blazed grating with a linear density of 333 lines mm−1, a blazing angle of 11.8°, and a dimension of 99.2mm × 60.0mm × 6.0mm was successfully fabricated with an average diffraction efficiency of 66%, a PV diffraction wavefront of 0.169λ (λ = 632.8 nm) and low stray light.

Fabrication of Convex Blazed Grating By Ar+Ion-Beam Etching

2011 ◽  
Vol 31 (4) ◽  
pp. 0405002
Author(s):  
汪海宾 Wang Haibin ◽  
刘全 Liu Quan ◽  
吴建宏 Wu Jianhong
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Blazed Grating

Facet formation of a GaN-based device using chemically assisted ion beam etching with a photoresist mask

1999 ◽  
Vol 17 (4) ◽  
pp. 1230-1234 ◽  
Author(s):  
W. J. Lee ◽  
H. S. Kim ◽  
G. Y. Yeom ◽  
J. W. Lee ◽  
T. I. Kim
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Photoresist Mask ◽  
Facet Formation

scholarly journals Convex blazed grating of high diffraction efficiency fabricated by swing ion-beam etching method

2018 ◽  
Vol 26 (19) ◽  
pp. 25381 ◽  
Author(s):  
Chen Shen ◽  
Xin Tan ◽  
Qingbin Jiao ◽  
Wei Zhang ◽  
Na Wu ◽  
...  
Keyword(s):  
Diffraction Efficiency ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Blazed Grating ◽  
Etching Method ◽  
High Diffraction Efficiency ◽  
High Diffraction

Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

1975 ◽  
Vol 33 ◽  
pp. 358-359
Author(s):  
M. Spector ◽  
A. C. Brown
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ectodermal Dysplasia ◽  
Ion Beam ◽  
Freeze Fracture ◽  
Ion Current ◽  
Ion Beam Etching ◽  
Pili Torti ◽  
Argon Ion ◽  
Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

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