In this study we have investigated the thermal stability (in the range 100 oC - 900 oC) of defects introduced in p-Si by electron beam deposition (EBD) of Ti and Ti/Mo Schottky contacts. The depletion regions below these contacts were probed by conventional deep level transient spectroscopy (DLTS) as well as Laplace (high-resolution) DLTS (L-DLTS). We have chosen Ti as the Schottky contact because the barrier height of Ti/p-Si (0.53 eV) is close to that of TiSi2/p-Si (0.50 eV) that forms after annealing at 600 – 650 oC. The Mo was added on top of the Ti in order to prevent annealing degradation. These contacts were annealed in Ar at temperatures of up to 900 oC in 100 oC steps for half-hour periods. Current – voltage (I-V) and capacitance – voltage (C-V) measurements were used to monitor the quality of the Schottky contacts. DLTS was performed after each annealing cycle to monitor the presence of the EBD-induced defects and to obtain heir electronic properties. We have found that that the Ti/Mo contacts were superior to the Ti contacts. Their (Ti/Mo) barrier height after EBD was 0.52 eV and it gradually increased to 0.56 eV after annealing at 500 oC - 600oC and then dropped to 0.50 eV annealing at 700 oC. DLTS revealed that the main defects introduced during metallization are hole traps H(0.17), H(0.23), H(0.37) and H(0.49). Annealing at 350 oC introduced an additional hole trap H(0.39). After annealing at 550 oC all defects were removed from the depletion region.
Deep level transient spectroscopy characterization of defects introduced inp-Si by electron beam deposition and proton irradiation
