scholarly journals Surface processing of amorphous optical materials by argon cluster ion beam

2018 ◽  
Vol 1105 ◽  
pp. 012134
Author(s):  
I V Nikolaev ◽  
N G Korobeishchikov ◽  
M A Roenko ◽  
A Kh Antonenko
Keyword(s):  
Optical Materials ◽  
Ion Beam ◽  
Surface Processing ◽  
Cluster Ion

Etching and Surface Smoothing with Gas-Cluster Ion Beams

1999 ◽  
Vol 585 ◽  
Author(s):  
D. B. Fenner ◽  
R. P. Torti ◽  
L. P. Allen ◽  
N. Toyoda ◽  
A. R. Kirkpatrick ◽  
...  
Keyword(s):  
Surface Science ◽  
Ion Beam ◽  
Surface Processing ◽  
Figures Of Merit ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Gas Clusters ◽  
Gas Cluster Ion Beam ◽  
Microelectronic Materials ◽  
Very High

AbstractSurface processing of microelectronic materials by bombardment with nanoparticles of condensed gases (i.e., clusters) in the form of an ion beam, makes possible etching and smoothing of those surfaces to very high figures of merit. As this is not possible with any conventional ion method, gas-cluster ion-beam systems have great potential in manufacturing. The formation of gas clusters and their collision with surfaces provides an interesting arena for novel physics and surface science. This paper outlines a physical model for the clusters and surface interactions, and provides examples of surface processing. In particular, the reduction of surface roughness while etching by cluster-ion bombardment is illustrated for various materials utilized in microelectronics.

Surface Processing and Modification of Polymers by Water Cluster Ion Beam

2011 ◽  
Author(s):  
H. Ryuto ◽  
M. Takeuchi ◽  
G. Ichihashi ◽  
P. Sommani ◽  
G. H. Takaoka ◽  
...  
Keyword(s):  
Water Cluster ◽  
Ion Beam ◽  
Surface Processing ◽  
Cluster Ion

Characteristics of acetone cluster ion beam for surface processing and modification

2014 ◽  
Vol 85 (2) ◽  
pp. 02C301
Author(s):  
H. Ryuto ◽  
Y. Kakumoto ◽  
M. Takeuchi ◽  
G. H. Takaoka
Keyword(s):  
Ion Beam ◽  
Surface Processing ◽  
Cluster Ion

Gas cluster ion beam processing equipment

2002 ◽  
Author(s):  
J. Bachand ◽  
A. Freytsis ◽  
E. Harrington ◽  
M. Gwinn ◽  
N. Hofmeester ◽  
...  
Keyword(s):  
Ion Beam ◽  
Processing Equipment ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

Gas Cluster Ion Beam Processing for Si Photonics

2007 ◽  
Author(s):  
N. Toyoda ◽  
l. Yamada ◽  
S. Akiyama ◽  
L.C. Kimerling ◽  
Y. Ishikawa ◽  
...  
Keyword(s):  
Ion Beam ◽  
Si Photonics ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

Development of Cu Etching Using O$_{2}$ Cluster Ion Beam under Acetic Acid Gas Atmosphere

2012 ◽  
Vol 51 ◽  
pp. 08HA02 ◽  
Author(s):  
Takanori Suda ◽  
Noriaki Toyoda ◽  
Ken-ichi Hara ◽  
Isao Yamada
Keyword(s):  
Acetic Acid ◽  
Ion Beam ◽  
Acid Gas ◽  
Gas Atmosphere ◽  
Cluster Ion

Ar gas cluster ion beam assisted XPS study of LiNbO3 Z cut surface

2021 ◽  
pp. 101428
Author(s):  
E.A. Skryleva ◽  
B.R. Senatulin ◽  
D.A. Kiselev ◽  
T.S. Ilina ◽  
D.A. Podgorny ◽  
...  
Keyword(s):  
Ion Beam ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Xps Study ◽  
Cut Surface

Smoothing Thin Films with Gas-Cluster Ion Beams

2000 ◽  
Vol 614 ◽  
Author(s):  
D.B. Fenner ◽  
J. Hautala ◽  
L.P. Allen ◽  
J.A. Greer ◽  
W.J. Skinner ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Spin Valve ◽  
High Spatial Frequency ◽  
Atomic Scale ◽  
Force Microscopy ◽  
Tantalum Films ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

ABSTRACTThin-film magnetic sensor and memory devices in future generations may benefit from a processing tool for final-step etching and smoothing of surfaces to nearly an atomic scale. Gas-cluster ion-beam (GCIB) systems make possible improved surface sputtering and processing for many types of materials. We propose application of GCIB processing as a key smoothing step in thin-film magnetic-materials technology, especially spin-valve GMR. Results of argon GCIB etching and smoothing of surfaces of alumina, silicon, permalloy and tantalum films are reported. No accumulating roughness or damage is observed. The distinct scratches and tracks seen in atomic-force microscopy of CMP-processed surfaces, are removed almost entirely by subsequent GCIB processing. The technique primarily reduces high spatial-frequency roughness and renders the topographic surface elevations more nearly gaussian (randomly distributed).

SPUTTERING WITH GAS CLUSTER-ION BEAMS

1996 ◽  
Vol 03 (01) ◽  
pp. 1017-1021 ◽  
Author(s):  
J. MATSUO ◽  
M. AKIZUKI ◽  
J. NORTHBY ◽  
G.H. TAKAOKA ◽  
I. YAMADA
Keyword(s):  
Ion Irradiation ◽  
Removal Rate ◽  
Ion Beam ◽  
Solid Surfaces ◽  
Silicon Surfaces ◽  
Cluster Ions ◽  
Mass Filter ◽  
Cluster Bombardment ◽  
Cluster Ion Beams ◽  
Cluster Ion

A high-current (~100 nA) cluster-ion-beam equipment with a new mass filter has been developed to study the energetic cluster-bombardment effects on solid surfaces. A dramatic reduction of Cu concentration on silicon surfaces has been achieved by 20-keV Ar cluster (N~3000) ion bombardment. The removal rate of Cu with cluster ions is two orders of magnitude higher than that with monomer ions. A significantly higher sputtering yield is expected for cluster-ion irradiation. An energetic cluster-ion beam is quite suitable for removal of metal.

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