Increasing the capillary of fiberglass under the application of a relief coating in the low-pressure radio-frequency induction discharge

2019 ◽  
Vol 1328 ◽  
pp. 012069
Author(s):  
E A Skidchenko ◽  
E F Voznesensky ◽  
V A Sysoev ◽  
G G Lutfullina ◽  
A E Karnouhov ◽  
...  
2017 ◽  
Vol 927 ◽  
pp. 012069
Author(s):  
A.V. Trofimov ◽  
E.F. Voznesensky ◽  
I.S. Miftakhov ◽  
A.I. Nagmutdinova ◽  
I.V. Krasina ◽  
...  

2016 ◽  
Vol 18 (1) ◽  
pp. 62-66 ◽  
Author(s):  
Xiang He ◽  
Yachun Zhang ◽  
Jianping Chen ◽  
Yudong Chen ◽  
Xiaojun Zeng ◽  
...  

2006 ◽  
Vol 99 (6) ◽  
pp. 064301 ◽  
Author(s):  
M. Cavarroc ◽  
M. C. Jouanny ◽  
K. Radouane ◽  
M. Mikikian ◽  
L. Boufendi

2021 ◽  
Author(s):  
Rajani K. Vijayaraghavan ◽  
Sean Kelly ◽  
David Coates ◽  
Cezar Gaman ◽  
Niall MacGearailt ◽  
...  

Abstract We demonstrate that a passive non-contact diagnostic technique, radio emission spectroscopy (RES), provides a sensitive monitor of currents in a low pressure radio frequency (RF) plasma. A near field magnetic loop antenna was used to capture RF emissions from the plasma without perturbing it. The analysis was implemented for a capacitively coupled RF plasma with an RF supply at a frequency of 13.56 MHz. Real-time measurements are captured in scenarios relevant to contemporary challenges faced during semiconductor fabrication (e.g. window coating and wall disturbance). Exploration of the technique for key equipment parameters including applied RF power, chamber pressure, RF bias frequencies and chamber wall cleanliness shows sensitive and repeatable function. In particular, the induced RES signal was found to vary sensitively to pressure changes and we were able to detect pressure and power variations as low as ~2.5 %/mtorr and ~3.5 %/watt, respectively, during the plasma processing during a trial generic plasma process. Finally, we explored the ability of RES to monitor the operation of a multiple frequency low-pressure RF plasma system (f1 = 2 MHz, f2 = 162 MHz) and intermixing products which suggests strongly that the plasma sheaths are the primary source of this non-linear diode mixing effect.


2021 ◽  
Vol 53 (3) ◽  
pp. 18-23
Author(s):  
Yulia A. Timoshina ◽  
Emil F. Voznesensky ◽  
Victor S. Zheltukhin

Results of the molecular dynamic simulation of the interaction of low-energy ions (from 10 to 100 eV) with the surface of polypropylene fibrous materials in low pressure radio-frequency (RF) argon plasma is presented. A full-atomic model using the LAMMPS classical molecular dynamics code was made. As a result of numerical calculations, it was found that argon ion bombardment initiates the breaking both of an intermolecular and intramolecular bond of polypropylene with sputtered particles being the hydrocarbon radicals and single atoms. The depth of implantation of the ion is determined, the change in the kinetic energy of the argon atom and the temperature of the simulated cell is obtained.


2020 ◽  
Vol 53 (43) ◽  
pp. 435201 ◽  
Author(s):  
Bocong Zheng ◽  
Yangyang Fu ◽  
De-qi Wen ◽  
Keliang Wang ◽  
Thomas Schuelke ◽  
...  
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