scholarly journals Test element for high voltage SiC Schottky diodes quality control

2020 ◽  
Vol 1695 ◽  
pp. 012153
Author(s):  
S V Sedykh ◽  
S B Rybalka ◽  
E A Kulchenkov ◽  
A A Demidov ◽  
A Yu Drakin ◽  
...  
Keyword(s):  
Quality Control ◽  
High Voltage ◽  
Schottky Diodes ◽  
Test Element

scholarly journals Determination of dV/dt and dI/dt characteristics for high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages

2020 ◽  
Vol 1679 ◽  
pp. 022045
Author(s):  
S B Rybalka ◽  
E A Kulchenkov ◽  
A A Demidov ◽  
N A Zhemoedov ◽  
A Yu Drakin ◽  
...  
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Different Types

High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2163-L2164 ◽  
Author(s):  
Hiromu Shiomi ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Epitaxial Films ◽  
Boron Doped Diamond ◽  
Boron Doped

scholarly journals dV/dt testing of high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages

2020 ◽  
Vol 1695 ◽  
pp. 012160
Author(s):  
D A Knyginin ◽  
S B Rybalka ◽  
E A Kulchenkov ◽  
A A Demidov ◽  
N A Zhemоedоv ◽  
...  
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Different Types

Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes

2005 ◽  
Vol 49 (6) ◽  
pp. 945-955 ◽  
Author(s):  
Atul Mahajan ◽  
B.J. Skromme
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Design And Optimization

Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

2017 ◽  
Vol 110 (8) ◽  
pp. 083503 ◽  
Author(s):  
V. V. Kozlovski ◽  
A. A. Lebedev ◽  
M. E. Levinshtein ◽  
S. L. Rumyantsev ◽  
J. W. Palmour
Keyword(s):  
High Voltage ◽  
Electron Irradiation ◽  
Schottky Diodes ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

2007 ◽  
pp. 873-876 ◽  
Author(s):  
Konstantin V. Vassilevski ◽  
I. Nikitina ◽  
A.B. Horsfall ◽  
Nicolas G. Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Schottky Diodes

Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures

2020 ◽  
Vol 13 (7) ◽  
pp. 074001 ◽  
Author(s):  
Abhinay Sandupatla ◽  
Subramaniam Arulkumaran ◽  
Geok Ing Ng ◽  
Kumud Ranjan ◽  
Manato Deki ◽  
...  
Keyword(s):  
High Voltage ◽  
Conduction Mechanism ◽  
Elevated Temperatures ◽  
Schottky Diodes

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

High-Voltage Tolerant Digitally Aided DCM/PWM Multiphase DC-DC Boost Converter With Integrated Schottky Diodes in 0.13 µm 1.2 V Digital CMOS Process

2013 ◽  
Vol 48 (3) ◽  
pp. 774-789 ◽  
Author(s):  
Deepak Bhatia ◽  
Lin Xue ◽  
Pengfei Li ◽  
Qiuzhong Wu ◽  
Rizwan Bashirullah
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Boost Converter ◽  
Cmos Process ◽  
Digital Cmos
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