AbstractThe effects of cation interdiffusion in Ga0.51In0.49P/GaAs single quantum wells are investigated using an error function distribution to model the compositional profile after interdiffusion. Two interdiffusion conditions are considered: cation only interdiffusion. and dominant cation interdiffusion. For both conditions the fundamental absorption edge exhibits a red shift with interdiffusion, with a large strain build up taking place in the early stages of interdiffusion. In the case of cation only interdiffusion, an abrupt carrier confinement profile is maintained even after significant interdiffusion, with a well width equal to that of the as-grown quantum well. When the interdiffusion takes place on two sublattices. but with the cation interdiffusion dominant, the red shift saturates and then decreases. The model results are consistent with reported experimental results. The effects of the interdiffusion-induced strain on the carrier confinement profile can be of interest for device applications in this material system.
Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells
