Cation Interdiffusion in GaInP/GaAs Single Quantum Wells

AbstractThe effects of cation interdiffusion in Ga0.51In0.49P/GaAs single quantum wells are investigated using an error function distribution to model the compositional profile after interdiffusion. Two interdiffusion conditions are considered: cation only interdiffusion. and dominant cation interdiffusion. For both conditions the fundamental absorption edge exhibits a red shift with interdiffusion, with a large strain build up taking place in the early stages of interdiffusion. In the case of cation only interdiffusion, an abrupt carrier confinement profile is maintained even after significant interdiffusion, with a well width equal to that of the as-grown quantum well. When the interdiffusion takes place on two sublattices. but with the cation interdiffusion dominant, the red shift saturates and then decreases. The model results are consistent with reported experimental results. The effects of the interdiffusion-induced strain on the carrier confinement profile can be of interest for device applications in this material system.

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Polarization Insensitivity in Interdiffused, Strained InGaAs/InP Quantum Wells

MRS Proceedings ◽

10.1557/proc-450-371 ◽

1996 ◽

Vol 450 ◽

Author(s):

Joseph Micallef ◽

James L. Borg ◽

Wai-Chee Shiu

Keyword(s):

Absorption Coefficient ◽

Quantum Wells ◽

Error Function ◽

Fundamental Absorption Edge ◽

Group V ◽

Group Iii ◽

Interdiffusion Process ◽

Excitonic Transition ◽

Polarization Insensitive ◽

Polarization Insensitivity

ABSTRACTTheoretical results are presented showing how quantum well disordering affects the TE and TM absorption coefficient spectra of In0.53Ga0.47As/InP single quantum wells. An error function distribution is used to model the constituent atom composition after interdiffusion. Different interdiffusion rates on the group V and group III sublattices are considered resulting in a strained structure. With a suitable interdiffusion process the heavy hole and light hole ground state, excitonic transition energies merge and the absorption coefficient spectra near the fundamental absorption edge become polarization insensitive. The results also show that this polarization insensitivity can persist with the application of an electric field, which is of considerable interest in waveguide modulators.

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Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

MRS Proceedings ◽

10.1557/proc-468-213 ◽

1997 ◽

Vol 468 ◽

Cited By ~ 12

Author(s):

D. Behr ◽

R. Niebuhr ◽

H. Obloh ◽

J. Wagner ◽

K. H. Bachem ◽

...

Keyword(s):

Raman Scattering ◽

Quantum Wells ◽

Phonon Mode ◽

Phonon Frequency ◽

Material System ◽

Single Quantum ◽

System A ◽

Resonant Raman ◽

Resonant Raman Scattering ◽

Excitation Conditions

ABSTRACTWe report on resonant Raman scattering in Al0.15Ga0.85N/GaN single quantum wells (QWs) and AlxGa1-xN/GaN/lnyGa1-yN heterostructures. By choosing appropriate excitation conditions we could probe selectively the GaN quantum well or the Al0.15Ga0.85N barrier of Al0.15Ga0.85N/GaN single quantum wells. For the InxGa1-xN material system a linear frequency shift of the E2- and A1(LO) phonon mode to lower frequencies was found with increasing In content. The shift was determined to -0.79cm-1 per % In content for the A,(LO) phonon frequency. Resonant excitation of AlxGa1-xN/GaN/InyGa1-YN heterostructures enabled us to detect phonon signals from the InxGa1-xN layer in the heterostructure and to determine its In content.

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Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.31.224 ◽

2007 ◽

Vol 31 ◽

pp. 224-226

Author(s):

S. Sanorpim ◽

D. Kaewket ◽

Sukkaneste Tungasmita ◽

R. Katayama ◽

Kentaro Onabe

Keyword(s):

Quantum Wells ◽

Absorption Edge ◽

Quantum Confinement Effect ◽

Fundamental Absorption Edge ◽

Blue Shift ◽

Optoelectronic Device ◽

Localized States ◽

Bandgap Energy ◽

Optical Transitions ◽

Single Quantum

Optical transitions in the In0.050Ga0.950P0.975N0.025/GaP lattice-matched single quantum wells (SQWs) with different well widths (LZ = 1.6 - 6.4 nm) have been investigated by low-temperature photoluminescence (PL) and PL-excitation (PLE). PL spectra showed the strong visible emission from the samples which attracted to a variety of optoelectronic device applications such as light emitting and laser diodes. Comparing to the bulk film, the PL peak position and the fundamental absorption edge of PLE spectra exhibit blue-shift, which is corresponded to the quantum confinement effect by the well. Comparison between the absorption edge of PLE spectra and the finite square well calculation demonstrate that the effective bandgap energy of the InGaPN/GaP system is might be originated mainly from the N-related localized states.

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II–VI / III–V Heterostructures

MRS Proceedings ◽

10.1557/proc-102-113 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 2

Author(s):

L. A. Kolodziejski ◽

R. L. Gunshor ◽

N. Otsuka ◽

A. V. Nurmikko

Keyword(s):

Quantum Wells ◽

Optoelectronic Device ◽

Substrate Material ◽

Material System ◽

Lattice Match ◽

Molecular Beam Epitaxial ◽

Gaas Devices ◽

Recent Developments ◽

Device Applications ◽

Common Substrate

ABSTRACTThe integration of several optoelectronic device functions onto a common substrate material is an area which is currently being actively pursued. In an effort to achieve this objective, experiments are under way to examine the epitaxial growth and material properties of a variety of both II–VI and III–V compounds grown on a substrate where the II–VI/III–V heterostructure can be utilized. This paper describes some recent developments involving the molecular beam epitaxial (MBE) growth and characterization of two important II–VI/III–V heterostructures: ZnSe/GaAs and InSb/CdTe;. a comparison is made between epitaxial layer/substrate interfaces and epilayer/epilayer interfaces for both heterostructures. The ZnSe/GaAs heterointerface, having a 0.25% lattice constant mismatch, has potential for use in passivation of GaAs devices. The InSb/CdTe heterointerface possesses an even closer lattice match, ∼0.05% (comparable to the (Al,Ga)As/GaAs material system), and is motivated by possible device applications provided by InSb/CdTe quantum wells.

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