scholarly journals Near electrode voltage drops in high current high pressure discharges with fast energy input

2021 ◽  
Vol 1787 (1) ◽  
pp. 012058
Author(s):  
A A Bogomaz ◽  
M E Pinchuk ◽  
A V Budin ◽  
A G Leks
Keyword(s):  
High Pressure ◽  
Energy Input ◽  
High Current ◽  
Voltage Drops ◽  
Electrode Voltage

CONDUCTIVITY MEASUREMENTS OF HIGH CURRENT, HIGH PRESSURE DISCHARGES

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-303-C7-304
Author(s):  
M. Skowronek ◽  
L. Giry ◽  
Vu Tien Gia ◽  
P. Romeas
Keyword(s):  
High Pressure ◽  
High Current ◽  
Conductivity Measurements

Cathode erosion in high-current high-pressure arc

2003 ◽  
Vol 36 (6) ◽  
pp. 704-712 ◽  
Author(s):  
V A Nemchinsky ◽  
M S Showalter
Keyword(s):  
High Pressure ◽  
High Current ◽  
Cathode Erosion

Comparison of Energy Losses in High-Current 1700 V Switches

2016 ◽  
Vol 858 ◽  
pp. 933-936
Author(s):  
Siddarth Sundaresan ◽  
Brian Grummel ◽  
Ranbir Singh
Keyword(s):  
Power Loss ◽  
Current Gain ◽  
Energy Losses ◽  
Electrical Characteristics ◽  
High Current ◽  
Leakage Currents ◽  
Switching Energy ◽  
Voltage Drops

1700 V/20 mΩ SiC Junction Transistors (SJTs) were recently released by GeneSiC with specific on-resistance as low as 2.3 mΩ-cm2, and current gain > 100. This paper benchmarks the electrical characteristics of the 1700 V SJTs against two best-in-class Si IGBTs. The SJT features 47% and 49% lower on-state voltage drops than the two Si IGBTs, respectively, with the SJT operating at 175°C, and the IGBTs at 150°C. The conduction power loss of the best Si IGBT is 2.2 times larger than the SJT at 25°C, and 1.6 times larger at 150°C. The leakage currents measured on the best IGBT at 1700 V and 150°C is 0.93 mA, as compared to 200 nA for the SJT at 175°C. As compared to the SJT, 3.6x and 3.3x higher (hard) switching energy losses are measured on the best 1700 V Si IGBT, at 25°C, and 150°C, respectively, when switching at a DC link voltage of 1200 V.

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