scholarly journals Surface morphology of nanostructured zinc oxide materials obtained by plasma-enhanced chemical vapor deposition

2021 ◽  
Vol 1967 (1) ◽  
pp. 012049
Author(s):  
L A Mochalov ◽  
A A Logunov ◽  
I O Prokhorov
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Materials ◽  
Nanostructured Zinc Oxide

Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

2018 ◽  
Vol 667 ◽  
pp. 48-54
Author(s):  
Adreen Azman ◽  
Ahmad Shuhaimi ◽  
Al-Zuhairi Omar ◽  
Anas Kamarundzaman ◽  
Muhammad Imran Mustafa Abdul Khudus ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Enhanced Surface

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Surface morphology and preferential orientation growth of TaC crystals formed by chemical vapor deposition

2009 ◽  
Vol 517 (11) ◽  
pp. 3235-3239 ◽  
Author(s):  
Xiang Xiong ◽  
Zhao-ke Chen ◽  
Bai-yun Huang ◽  
Guo-dong Li ◽  
Feng Zheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Preferential Orientation ◽  
Orientation Growth

Volatile, Monomeric, and Fluorine-Free Precursors for the Metal Organic Chemical Vapor Deposition of Zinc Oxide

2010 ◽  
Vol 2010 (9) ◽  
pp. 1366-1372 ◽  
Author(s):  
Daniela Bekermann ◽  
Detlef Rogalla ◽  
Hans-Werner Becker ◽  
Manuela Winter ◽  
Roland A. Fischer ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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