scholarly journals Investigation of the Phonon Spectra in CdSe/CdS Nanoplatelets by Raman Spectroscopy

2021 ◽  
Vol 2015 (1) ◽  
pp. 012076
Author(s):  
N.N. Kurus ◽  
A.G. Milekhin ◽  
R.B. Vasiliev ◽  
B.M. Saidzhonov ◽  
K.V. Anikin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Frequency Shift ◽  
Phonon Mode ◽  
Longitudinal Optical ◽  
Phonon Modes ◽  
Cdse Core ◽  
Phonon Spectra ◽  
Surface Optical ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Abstract We report the phonon spectra of core/shell CdSe/CdS nanoplatelets with different shell thicknesses studied using Raman scattering. The nanoplatelets are rectangular colloidal nanocrystals, with thicknesses of core and shell layers of a few nanometers. The Raman spectra show features corresponding to the dominating longitudinal optical (LO) and surface optical (SO) phonon modes of the CdSe core in CdS shell located in the frequency regions of 200-210 and 250-290 cm-1, respectively. As the shell thickness increases, the phonon modes reveal a frequency shift and a change in intensity. The frequency shift associated with a change in the stress state in the core and shell, as well as with confinement effects is discussed. The phonon mode intensities are determined by the thickness of the shell and the proximity to resonant Raman scattering conditions.

ONE-PHONON-ASSISTED ELECTRON RESONANT RAMAN SCATTERING IN FREE-STANDING QUANTUM WIRES

2007 ◽  
Vol 21 (17) ◽  
pp. 2989-3000
Author(s):  
XIANG-FU ZHAO ◽  
CUI-HONG LIU
Keyword(s):  
Raman Scattering ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Longitudinal Optical ◽  
Phonon Modes ◽  
Free Standing ◽  
Surface Optical ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Valence Bands

The scattering intensity (SI) for an electron resonant Raman scattering (ERRS) process in a free-standing semiconductor quantum wire of cylindrical geometry associated with bulk longitudinal optical (LO) phonon modes or the surface optical (SO) phonon modes is calculated for T=0 K . The Fröhlich interaction is considered to illustrate the theory for a GaAs system. Electron states are confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Numerical results and a discussion are also presented for various radii of the cylindrical quantum wires.

Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

1997 ◽  
Vol 468 ◽  
Author(s):  
D. Behr ◽  
R. Niebuhr ◽  
H. Obloh ◽  
J. Wagner ◽  
K. H. Bachem ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Mode ◽  
Phonon Frequency ◽  
Material System ◽  
Single Quantum ◽  
System A ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Excitation Conditions

ABSTRACTWe report on resonant Raman scattering in Al0.15Ga0.85N/GaN single quantum wells (QWs) and AlxGa1-xN/GaN/lnyGa1-yN heterostructures. By choosing appropriate excitation conditions we could probe selectively the GaN quantum well or the Al0.15Ga0.85N barrier of Al0.15Ga0.85N/GaN single quantum wells. For the InxGa1-xN material system a linear frequency shift of the E2- and A1(LO) phonon mode to lower frequencies was found with increasing In content. The shift was determined to -0.79cm-1 per % In content for the A,(LO) phonon frequency. Resonant excitation of AlxGa1-xN/GaN/InyGa1-YN heterostructures enabled us to detect phonon signals from the InxGa1-xN layer in the heterostructure and to determine its In content.

Resonant Raman scattering by longitudinal-optical phonons inZn1−xMnxSe (x=0, 0.03, 0.1) near theE0gap

1990 ◽  
Vol 42 (17) ◽  
pp. 11325-11334 ◽  
Author(s):  
W. Limmer ◽  
H. Leiderer ◽  
K. Jakob ◽  
W. Gebhardt ◽  
W. Kauschke ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering from screened longitudinal optical phonons in EuTe

1973 ◽  
Vol 13 (2) ◽  
pp. 209-213 ◽  
Author(s):  
G.D. Holah ◽  
J.S. Webb ◽  
R.B. Dennis ◽  
C.R. Pidgeon
Keyword(s):  
Raman Scattering ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Dispersive phonon modes by resonant Raman scattering in AgBr

1977 ◽  
Vol 24 (9) ◽  
pp. 607-609 ◽  
Author(s):  
J. Windscheif ◽  
H. Stolz ◽  
W. von der Osten
Keyword(s):  
Raman Scattering ◽  
Phonon Modes ◽  
Resonant Raman ◽  
Resonant Raman Scattering

scholarly journals Phonon Interaction in InGaAs/GaAs Quantum Dots

2007 ◽  
Vol 1053 ◽  
Author(s):  
Stefan Werner ◽  
Patrick Zimmer ◽  
André Strittmatter ◽  
Axel Hoffmann
Keyword(s):  
Quantum Dots ◽  
Raman Scattering ◽  
Phonon Mode ◽  
Radiative Lifetime ◽  
Coupled Processes ◽  
Phonon Interaction ◽  
Self Organized ◽  
Luminescence Process ◽  
Resonant Raman ◽  
Resonant Raman Scattering

ABSTRACTThe carrier-phonon interaction in self-organized In(Ga)As/GaAs quantum dots is investigated under resonant excitation of the ground-state transition. Different phonon-coupled processes are observed. The distinction between Raman scattering and hot-luminescence process has been resolved by time-dependent photoluminescence measurements. The quantum dot LO (33.8 meV) as well as an interface (36.5 meV) phonon mode is observed by resonant Raman scattering. For the QD LO phonon mode, a very short radiative lifetime of 10 ps was found.

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