scholarly journals Predictor of reliability indicators for nanoelectronic heterostructure devices with transverse current transfer under conditions of limited experimental information based on Bayesian inversion

2021 ◽  
Vol 2056 (1) ◽  
pp. 012051
Author(s):  
N A Vetrova ◽  
A A Filyaev ◽  
V D Shashurin ◽  
L A Luneva
Keyword(s):  
Quantum Confinement ◽  
Resonant Tunneling ◽  
Experimental Information ◽  
Bayesian Inversion ◽  
Current Transfer ◽  
Interval Estimates ◽  
Tunneling Diodes ◽  
Reliability Indicators ◽  
Transverse Current ◽  
Heterostructure Devices

Abstract Predictor of the reliability indicators of resonant tunneling diodes with a generalization of the methodology for nanoelectronic heterostructure devices with quantum confinement and transverse current transfer has been developed. The advantage of the developed software is the possibility of interactive input of additional experimental information for further calculation of point and interval estimates of the reliability indicators of semiconductor devices using Bayesian inversion, which allows predicting these indicators under conditions of limited experimental information.

scholarly journals Atomic-scale Authentication with Resonant Tunneling Diodes

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1625-1629
Author(s):  
J. Roberts ◽  
I. E. Bagci ◽  
M. A. M. Zawawi ◽  
J. Sexton ◽  
N. Hulbert ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Atomic Scale ◽  
Resonant Tunneling Diodes ◽  
Physical Unclonable Functions ◽  
Tunneling Diodes ◽  
The Individual

ABSTRACTThe room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

scholarly journals Bursting and Excitability in Neuromorphic Resonant Tunneling Diodes

2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Ignacio Ortega-Piwonka ◽  
Oreste Piro ◽  
José Figueiredo ◽  
Bruno Romeira ◽  
Julien Javaloyes
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

scholarly journals Determination of Carrier Density and Dynamics via Magnetoelectroluminescence Spectroscopy in Resonant-Tunneling Diodes

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
E.R. Cardozo de Oliveira ◽  
A. Naranjo ◽  
A. Pfenning ◽  
V. Lopez-Richard ◽  
G.E. Marques ◽  
...  
Keyword(s):  
Carrier Density ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes
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