scholarly journals Raman analysis of the crystallinity degree for the local regions in Ge2Sb2Te5 films after laser exposure at different parameters

2021 ◽  
Vol 2086 (1) ◽  
pp. 012040
Author(s):  
N M Tolkach ◽  
N V Vishnyakov ◽  
A O Yakubov ◽  
A U Sudakova ◽  
E S Trofimov ◽  
...  
Keyword(s):  
Laser Pulses ◽  
Optical Control ◽  
Integrated Optics Devices ◽  
Laser Exposure ◽  
State Transformation ◽  
Crystallinity Degree ◽  
Raman Analysis ◽  
Optical Signals ◽  
Telecommunication Wavelength ◽  
Multilevel Modulation

Abstract The evaluation of the crystallinity degree for the local regions in Ge2Sb2Te5 (GST) thin films after phase state transformation by laser pulses at 405 nm wavelength was analyzed using the Raman spectroscopy. The modes of laser radiation for controlling the reflectivity and transmissivity at 1550 nm telecommunication wavelength of the local regions in the GST film were established. The results obtained make it possible to implement the method of the completely optical control of the multilevel modulation of the optical signals for the integrated optics devices.

Doping and crystallization of amorphous SiGe films with an excimer (KrF) laser

1995 ◽  
Vol 10 (8) ◽  
pp. 1884-1888 ◽  
Author(s):  
S. Krishnan ◽  
M.I. Chaudhry ◽  
S.V. Babu
Keyword(s):  
Silicon Germanium ◽  
Room Temperature ◽  
Laser Pulses ◽  
Laser Exposure ◽  
Silicon Substrates ◽  
A Value ◽  
Crystal Film ◽  
Krf Laser ◽  
Amorphous Silicon Germanium

Amorphous silicon germanium (a-SiGe) films, deposited on silicon substrates at room temperature in a molecular beam epitaxy system, were transformed into a single-crystal film and doped with phosphorus by exposure to KrF laser pulses. Electron channeling patterns showed that laser exposure resulted in crystallization of the undoped a-SiGe films. The SiGe films were doped by laser irradiation, using a phosphorus spin-on-dopant. The sheet resistance of the doped films decreased with increasing numbers of pulses, reaching a value of about ∼ 5 × 104 ohms/□ after 15 pulses. I-V data from mesa-type n-SiGe/p-Si diode devices were used to determine the effect of laser processing on the quality of the SiGe films.

Optical control of superluminal propagation of nanosecond laser pulses

2013 ◽  
Vol 87 (3) ◽  
Author(s):  
Emilio Ignesti ◽  
Federico Tommasi ◽  
Roberto Buffa ◽  
Lorenzo Fini ◽  
Emiliano Sali ◽  
...  
Keyword(s):  
Laser Pulses ◽  
Optical Control ◽  
Nanosecond Laser ◽  
Superluminal Propagation ◽  
Nanosecond Laser Pulses

scholarly journals Optical Control of Field-Emission Sites by Femtosecond Laser Pulses

2009 ◽  
Vol 103 (25) ◽  
Author(s):  
Hirofumi Yanagisawa ◽  
Christian Hafner ◽  
Patrick Doná ◽  
Martin Klöckner ◽  
Dominik Leuenberger ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Field Emission ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Optical Control

scholarly journals Ultrafast Optical Control of Magnetic Interactions in Carrier-Density-Controlled Ferromagnetic Semiconductors

2019 ◽  
Vol 9 (5) ◽  
pp. 948 ◽  
Author(s):  
Masakazu Matsubara
Keyword(s):  
Carrier Density ◽  
Magnetic Interaction ◽  
Laser Pulses ◽  
Ultrashort Laser Pulses ◽  
Optical Control ◽  
Magnetic Interactions ◽  
Magnetic Exchange ◽  
Ultrafast Optical ◽  
Recent Success ◽  
Ultrashort Laser

Investigation of the interaction of ultrashort laser pulses with magnetically ordered materials has become a fascinating research topic in modern magnetism. Especially, the control of magnetic order by sub-ps laser pulses has become a fundamentally important topic with a high potential for future spintronics applications. This paper will review the recent success in optically controlling the magnetic interactions in carrier-density-controlled ferromagnetic semiconductor EuO doped with Gd ions. When the Gd concentration is low, the magnitude of the magnetic interaction is enhanced by the irradiation of ultrashort laser pulses, whereas it is attenuated when the Gd concentration is high. In ferromagnetic Eu1−xGdxO, we thereby demonstrate the strengthening as well as the weakening of the magnetic interaction by 10% and within 3 ps by optically controlling the magnetic exchange interaction. This principle—ultrafast optical control of magnetic interaction—can be applied to future ultrafast opto-spintronics.

Encryption of nonlinear optical signals in ZnO:Al thin films by ultrashort laser pulses

2016 ◽  
Vol 64 (6) ◽  
pp. 601-608 ◽  
Author(s):  
J. H. Castro-Chacón ◽  
C. Torres-Torres ◽  
A. V. Khomenko ◽  
M. A. García-Zárate ◽  
M. Trejo-Valdez ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonlinear Optical ◽  
Laser Pulses ◽  
Ultrashort Laser Pulses ◽  
Optical Signals ◽  
Ultrashort Laser
Sign in / Sign up

Export Citation Format

Share Document