scholarly journals Silicon carbide of 4H-SiC type Schottky diode current-voltage characteristics in small-sized type metal-polymeric package SOT-89

2021 ◽  
Vol 2086 (1) ◽  
pp. 012065
Author(s):  
S V Sedykh ◽  
S B Rybalka ◽  
A A Demidov ◽  
E A Kulchenkov
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Reverse Current ◽  
Forward Direction ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ideal Diode ◽  
Diode Current ◽  
The Ideal

Abstract The forward and reverse current–voltage characteristics of Ti/Al/4H-SiC Schottky diode type DDSH411A91 in modern small-sized (SOT-89) type metal-polymeric package have been obtained. In forward direction (current up to 2 A) on the basis of analysis it is shown that Schottky diode corresponds to the "ideal" diode with ideality factor n=1.12 and effective Schottky barrier height φB =1.2 eV. It is shown that reverse current-voltage characteristics (breakdown voltage 1200 V) can be well approximated by mechanism of field dependence of barrier height lowering by the presence of the intermediate layer in the form of oxide on the 4H-SiC surface.

Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements

2009 ◽  
Vol 79-82 ◽  
pp. 1317-1320 ◽  
Author(s):  
S Faraz ◽  
Haida Noor ◽  
M. Asghar ◽  
Magnus Willander ◽  
Qamar-ul Wahab
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Depletion Region ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Experimental Values ◽  
Iv Curves ◽  
The Ideal

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Vickers Microhardness ◽  
Schottky Barrier Diodes ◽  
Microhardness Test ◽  
Current Voltage

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

2016 ◽  
Vol 858 ◽  
pp. 1170-1173 ◽  
Author(s):  
Giuseppe Greco ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Domenico Corso ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Schottky Barrier Height ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant carrier transport mechanism at the metal/p-GaN interface (Thermionic Field Emission). From the fit of the experimental current-voltage data it was possible to determine the Schottky barrier height values for the three systems, 2.08 eV (Ti/Al), 1.57 eV (TiN/Ti/Al) and 1.89 eV (Ni/Au). Hence, choosing the highest barrier height contact (Ti/Al) as gate electrode on a p-GaN/AlGaN/GaN heterostructure, optimized based on simulations, allowed to obtain devices with a normally-off behavior and a positive Vth of +1.3 V.

Utilization of silicon detectors with “ideal-diode” current-voltage characteristics

2013 ◽  
Vol 47 (2) ◽  
pp. 209-212 ◽  
Author(s):  
V. L. Sukhanov ◽  
P. N. Aruev ◽  
M. V. Drozdova ◽  
N. V. Zabrodskaya ◽  
V. V. Zabrodskiy ◽  
...  
Keyword(s):  
Silicon Detectors ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ideal Diode ◽  
Diode Current

Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

2015 ◽  
Vol 36 (12) ◽  
pp. 124002 ◽  
Author(s):  
Kamal Zeghdar ◽  
Lakhdar Dehimi ◽  
Achour Saadoune ◽  
Nouredine Sengouga
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Current Voltage ◽  
Current Voltage Characteristics
Sign in / Sign up

Export Citation Format

Share Document