scholarly journals Novel design and analysis of RF MEMS shunt capacitive switch for radar and satellite communications

2019 ◽  
Vol 15 (2) ◽  
pp. 971
Author(s):  
Maham Kamil Naji ◽  
Alaa Desher Farhood ◽  
Adnan Hussein Ali
Keyword(s):  
Radio Frequency ◽  
High Frequency ◽  
Return Loss ◽  
Rf Mems ◽  
Dielectric Material ◽  
Satellite Communications ◽  
Superior Performance ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

<span>In this paper, a new type of Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) shunt capacitive switch is designed and studied. RF MEMS switch has a number of advantages in a modern telecommunication system such as low power consumption, easy to fabricate and power handling capacity at radio frequency. At high frequency applications, this switch shows very superior performance due to which it now became one of the key elements for RF application. In this proposed design, an innovative type of MEMS switch is designed. The MEMS switch structure consists of substrate, co-planar waveguide (CPW), dielectric material and a metallic bridge. The proposed MEMS switch has a dimension of 508 µm × 620 µm with a height of 500 µm. The substrate used is GaAs material. The relative permittivity of the substrate is 12.9. This proposed MEMS switch is designed and simulated in both UP (ON) state and DOWN (OFF) state. The proposed RF-MEMS switch is designed and simulated using Ansoft High frequency structure simulator (HFSS) electromagnetic simulator. The simulated result shows better performance parameters such as return loss ( &lt;-10 dB)  and insertion loss ( &gt; -0.5 dB) in UP state, whereas return loss ( &gt; -0.5 dB) and isolation (&lt;-10 dB) in DOWN state. This switch has good isolation characteristics of – 43 dB at 27 GHz frequency.</span>

Design of elliptical-shaped reconfigurable patch antenna with shunt capacitive RF-MEMS switch for satellite applications

2020 ◽  
pp. 1-10
Author(s):  
Bokkisam Venkata Sai Sailaja ◽  
Ketavath Kumar Naik
Keyword(s):  
Return Loss ◽  
Satellite Communication ◽  
Rf Mems ◽  
Dielectric Material ◽  
Actuation Voltage ◽  
Split Ring Resonator ◽  
Antenna Design ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Satellite Applications

Abstract In this paper, non-uniform meandered line shunt capacitive RF-MEMS switch is presented at an elliptical patch etched with a split-ring resonator (SRR) for satellite communication applications. The non-uniform meander line shunt capacitive is a fixed-fixed type of RF-MEMS switch that is introduced in this model antenna. The proposed antenna design is resonated at 10.46 GHz with the return loss of −37.6 dB. The performance evolution of the proposed antenna design is evaluated with and without integrated RF-MEMS switch on the proposed antenna SRR. It is observed that the proposed model at the ON-state switch resonates at 10.57 GHz frequency with the return loss of −30 dB. Similarly, at the OFF-state switch, it resonates at 10.53 GHz frequency with the return loss of −43 dB. Al3N4 (aluminum nitride) is used for the switch as a dielectric material, hence the switch attains higher isolation. The actuation voltage of 7.9 V is required for the switch to actuate from ON to OFF state. The switch attains minimum insertion and return loss which is discussed in further sections. The proposed antenna is fabricated and tested by a vector network analyzer; there is a good agreement between the simulated and measured results.

Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi
Keyword(s):  
Transmission Line ◽  
Numerical Investigation ◽  
Line Width ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Ka Band ◽  
Mems Switch ◽  
Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

Reliability Research of Capacitive RF-MEMS Switch

2013 ◽  
Vol 753-755 ◽  
pp. 2507-2510
Author(s):  
Ming Xin Song ◽  
Rui Wu ◽  
Qian Liu ◽  
Hong Wang ◽  
Zuo Bao Cao ◽  
...  
Keyword(s):  
Failure Mechanism ◽  
Rf Mems ◽  
Dielectric Material ◽  
Elastic Coefficient ◽  
Dielectric Thickness ◽  
Rf Mems Switch ◽  
Dielectric Charging ◽  
Mems Switch ◽  
Simulation Results ◽  
Plate Distance

This paper presents the model of capacitive RF-MEMS switch for the lifetime prediction. The model is based on dielectric charging failure mechanism. The simulation results show that lifetime can reach 1000 hours when elastic coefficient (K) adopts 4-16N/m, Si3N4 as dielectric material, 0.4-1μm of dielectric thickness, 2-5μm of plate distance, less than 20V of driven voltage.

scholarly journals Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

2019 ◽  
pp. 43-50
Keyword(s):  
Return Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Design System ◽  
Nsga Ii ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Axial Residual Stress ◽  
Switch Design ◽  
Design Requirements

The present paper aimed at designing, optimizing, and simulating the RF MEMS Switch which is stimulated electrostatically. The design of the switch is located on the CoplanarWaveguide (CPW) transmission line. The pull-in voltage of the switch was 2V and the axial residual stress of the proposed design was obtained at 23MPa. In order to design and optimize the geometric structure of the switch, the desired model was extracted based on the objective functions of the actuation voltage and the return loss up-state and also the isolation down-state using the mathematical programming. Moreover, the model was solved by the NSGA-II meta-heuristic algorithm in MATLAB software. In addition, the design requirements and the appropriate levels for designing the switch were obtained by presenting the Pareto front from the beam actuation voltage and also the return loss up-state and isolation down-state. Finally, the RF parameters of the switch were calculated as S11=-2.54dB and S21=-33.18dB at the working frequency of 40GHz by extracting the appropriate parameters of the switch design through simulating a switch designed by the COMSOL Multiphysics software 4.4a and the advanced design system (ADS).

scholarly journals Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 37
Author(s):  
Kun Deng ◽  
Fuxing Yang ◽  
Yucheng Wang ◽  
Chengqi Lai ◽  
Ke Han
Keyword(s):  
Rf Mems ◽  
Dielectric Material ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Ka Band ◽  
High Capacitance ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Metal Insulator Metal ◽  
State Capacitance

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage.

The study of a high-isolation single-pole-double-throw RF MEMS switch

2018 ◽  
Vol 32 (30) ◽  
pp. 1850362
Author(s):  
Lei Han ◽  
Shen Xiao
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Frequency Range ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch ◽  
Thermal Actuators ◽  
Measurement Results ◽  
Better Than

In this paper, design, fabrication and measurements of a novel single-pole-double-throw three-state RF MEMS switch based on silicon substrate are presented. The RF MEMS switch consists of two UV-shaped beam push–pull thermal actuators which have three states of ON, OFF and Deep-OFF by using current actuation. When the switch is at Deep-OFF state, it can provide a higher isolation. The switch is fabricated by MetalMUMPs process. The measurement results show that, to the proposed single-pole-double-throw RF MEMS switch, when Switch I is at the ON state and Switch II is at the OFF state, the return loss is better than −16 dB, the insertion loss of Port1 and Port2 is less than −0.9 dB and the isolation of Port3 and Port1 is better than −22 dB at the frequency range from 8 GHz to 12 GHz. When Switch I is at the ON state and the actuator of Switch II is pulled back, which is called the Deep-OFF state, the return loss of Port1 is better than −15.5 dB, the insertion loss of Port1 and Port2 is better than −0.8 dB, and the isolation of Port3 and Port1 is better than −23.5 dB can be achieved at the frequency range from 8 GHz to 12 GHz.

scholarly journals High-performance inline RF MEMS switch for application in 5G mobile networks

2021 ◽  
Vol 2086 (1) ◽  
pp. 012068
Author(s):  
A V Tkachenko ◽  
I E Lysenko ◽  
A V Kovalev ◽  
D V Vertyanov
Keyword(s):  
Mobile Networks ◽  
High Performance ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Coplanar Waveguide ◽  
Satellite Communications ◽  
Elastic Suspension ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
5G Mobile Networks

Abstract This article presents the results of the design and analysis of a radio-frequency switch made using microelectromechanical systems technology. The device is the capacitive switch with a hybrid type of contact, in which the movable electrode of the structure – the metal membrane is part of the microwave signal line of the coplanar waveguide. The switch design is characterized by a high capacitance ratio and low contact resistance. The zig-zag elastic suspension is used to reduce the value of the pull-down voltage – 2 V and the switching time ∼ 7 us. The central resonant frequency of the switch is 3.8 GHz. In this case, in the open state, the value of the insertion loss is not more than -0.2 dB and the isolation value in the close state is not less than -55 dB. The effective frequency range is the S-band, as well as the C-, X- and Ku-band, in which the isolation value is at least -30 dB. The presented inline RF MEMS switch is suitable for use in various types of ground and satellite communications, in particular for devices and systems of 5G mobile networks.

Design, fabrication, testing and packaging of a silicon micromachined radio frequency microelectromechanical series (RF MEMS) switch

Sadhana ◽  
2013 ◽  
Author(s):  
M S GIRIDHAR ◽  
ASHWINI JAMBHALIKAR ◽  
JIJU JOHN ◽  
R ISLAM ◽  
ANANDA BEHERA ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch

The low-complexity RF MEMS switch at EADS: an overview

2011 ◽  
Vol 3 (5) ◽  
pp. 499-508 ◽  
Author(s):  
Bernhard Schoenlinner ◽  
Armin Stehle ◽  
Christian Siegel ◽  
William Gautier ◽  
Benedikt Schulte ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Rf Mems ◽  
Low Cost ◽  
Low Complexity ◽  
Phase Shifters ◽  
Experimental Investigations ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

This paper gives an overview of the low-complexity radio frequency microelectromechanical systems (RF MEMS) switch concept and technology of EADS Innovation Works in Germany. Starting in 2003, a capacitive switch concept, which is unique in several aspects, was developed to address specific needs in the aeronautic and space. Thermally grown silicon oxide as dielectric layer, the silicon substrate as actuation electrode, and a conductive zone realized by ion implantation make the EADS RF MEMS switch a very simple, low-cost, and reliable approach. In this document, data on experimental investigations are presented, which demonstrate outstanding performance figures in terms of insertion loss, isolation, frequency range, bandwidth, RF-power handling, and robustness with respect to thermal load. Based on this concept, numerous different circuits in particular single-pole single-throws (SPSTs), single-pole multi-throws (SPMTs), tunable filters, phase shifters, and electronically steerable antennas between 6 and 100 GHz have been designed, fabricated, and characterized.

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