scholarly journals Determination of hole diffusion length in n-GaN

2021 ◽  
Vol 2086 (1) ◽  
pp. 012075
Author(s):  
D S Arteev ◽  
A V Sakharov ◽  
A E Nikolaev ◽  
E E Zavarin ◽  
W V Lundin ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Room Temperature ◽  
Diffusion Length ◽  
Reciprocity Theorem ◽  
High Excitation ◽  
Bulk Gan ◽  
Recombination Centers ◽  
Minority Carriers ◽  
Hole Diffusion Length

Abstract The paper presents the derivation of a model for minority carriers collection based on the reciprocity theorem and its application for determination of hole diffusion length in n-GaN by means of photoluminescence. The estimated hole diffusion lengths at room temperature are 110 nm and 194 nm in the case of low and high excitation, respectively, which could be explained by saturation of non-radiative recombination centers in bulk GaN and at the surface with photogenerated carriers.

Determination of the diffusion length of the minority carriers in electron-beam-excited n-type GaAs

1971 ◽  
Vol 4 (1) ◽  
pp. 249-255 ◽  
Author(s):  
S. Rakshit ◽  
S. N. Biswas ◽  
A. N. Chakravarti
Keyword(s):  
Electron Beam ◽  
Diffusion Length ◽  
Minority Carriers

Recombination Processes in 4H-SiC pn Structures

2016 ◽  
Vol 858 ◽  
pp. 345-348 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Baptiste Berenguier ◽  
Eugene B. Yakimov ◽  
Laurent Ottaviani
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Diffusion Length ◽  
Induced Current ◽  
Donor Concentration ◽  
Reverse Voltage ◽  
Recombination Processes ◽  
Electron Beam Induced Current ◽  
Switching Characteristics ◽  
Hole Diffusion Length

Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

Determination of hole diffusion length in n-InSb at 80 K

2001 ◽  
Author(s):  
Bo-Liang Chen ◽  
Yueqing Zhang ◽  
Xiaoming Fang ◽  
Juncao Lin
Keyword(s):  
Diffusion Length ◽  
Hole Diffusion Length

Room Temperature Electroluminescence From D1 Dislocation Centers In Silicon

1996 ◽  
Vol 442 ◽  
Author(s):  
Einar Ö Sveinbjörnsson ◽  
Jörg Weber
Keyword(s):  
Power Efficiency ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Metal Impurities ◽  
Sample Heating ◽  
Highly Sensitive ◽  
External Power ◽  
Electroluminescence Intensity ◽  
Recombination Centers ◽  
Dislocation Center

AbstractWe report on electroluminescence at room temperature from forward biased n+-p silicon diodes containing high densities (108-109 cm−2) of dislocations at the junction interface. In addition to electroluminescence from band-to-band transitions, we observe a signal arising from the well known dislocation center Dl peaked at ∼1.6 μm (0.78 eV). The Dl electroluminescence intensity at room temperature increases linearly with current density with no observable saturation as long as sample heating is avoided. The quenching of the D l luminescence between 4 K and room temperature is highly sensitive to metal impurities which introduce competitive non-radiative recombination centers. The external power efficiency of the DI electroluminescence was estimated to be of the order of 10−6.

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