scholarly journals Fabrication and Characterization of Self-Powered Photosensor Based on Nanostructure TiO2/natural Dyes

2021 ◽  
Vol 2114 (1) ◽  
pp. 012055
Author(s):  
H.F. Al-Taay
Keyword(s):  
Natural Dyes ◽  
Voltage Sensitivity ◽  
Back Contact ◽  
Zero Bias ◽  
Glass Substrates ◽  
Nanostructured Thin Film ◽  
Current Voltage ◽  
Fabrication And Characterization ◽  
Self Powered

Abstract Self-powered photosensor is fabricated based on nanostructure TiO2/natural dyes. TiO2 nanostructured thin film was prepared on FTO/glass substrates by hydrothermal method. Surface morphology, crystalline structure, as well as optical properties of the prepared sample are investigated. Three types of natural dyes, pomegranate, aubergine, and coffee are used as an active layer (absorber) of the fabricated photosensor. However, the solution of dye was casted onto TiO2 and left to dry naturally and carbon/FTO was used as a back contact of the device. Current-voltage (I-V) characteristic under dark and light case was characterized for all prepared sensors. Besides, the fabricated sensors appeared good response to whit light under zero bias voltage. Sensitivity, raise and decay time of the prepared photosensor are calculated.

FABRICATION AND CHARACTERIZATION OF La2-xSrxCuO4/Nb-SrTiO3 HETEROJUNCTIONS IN DIFFERENT DOPED REGIMES

2012 ◽  
Vol 27 (01) ◽  
pp. 1350005 ◽  
Author(s):  
Y. ZHANG ◽  
G. F. WANG ◽  
W. L. LI ◽  
J. Q. SHEN ◽  
P. G. LI ◽  
...  
Keyword(s):  
Carrier Density ◽  
Pulsed Laser ◽  
Depletion Layer ◽  
Laser Deposition ◽  
Superconducting Gap ◽  
Applied Bias ◽  
Current Voltage ◽  
Fabrication And Characterization ◽  
The Difference

Two types of p–n junction were fabricated by depositing underdoped La 1.9 Sr 0.1 CuO 4 film and overdoped La 1.8 Sr 0.2 CuO 4 film on n -type 0.5 wt.% Nb -doped SrTiO 3 (NSTO) substrates using pulsed laser deposition technique (PLD), respectively. Current–voltage (I–V) characteristics of the La 2-x Sr x CuO 4/NSTO heterojunction were measured in the temperature range from 5 K to 300 K. All I–V curves show a fine rectifying property and a visible reduction of the diffusion potential (Vd) is observed, but the behaviors of Vd are vastly different for the underdoped and overdoped regimes at temperatures below Tc. Analysis results show that the characteristics of the heterojunction are possibly affected not only by the superconducting gap of LSCO at Tc, but also by the depletion layer in the interface of LSCO/NSTO junction. The variation of the depletion layer is possibly different under the same applied bias voltages for the underdoped La 1.9 Sr 0.1 CuO 4/NSTO junction and overdoped La 1.8 Sr 0.2 CuO 4/NSTO junction due to the difference of carrier density at La 1.9 Sr 0.1 CuO 4 and La 1.8 Sr 0.2 CuO 4.

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Electrical Characterization of In Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Marcano ◽  
A. Singh
Keyword(s):  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Interface Layer ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Direct Current Voltage ◽  
Etched Surface

AbstractIn/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.

Nanowire Arrays for Thermoelectric Devices

2003 ◽  
Author(s):  
Woo C. Kim ◽  
Alexis R. Abramson ◽  
Scott T. Huxtable ◽  
Arun Majumdar ◽  
Yiying Wu ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Nanowire Arrays ◽  
Native Oxide ◽  
Thermoelectric Device ◽  
Growth Mechanisms ◽  
Thermoelectric Devices ◽  
Current Voltage ◽  
Semiconductor Junction ◽  
Fabrication And Characterization

This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi2Te3) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi2Te3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi2Te3 device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi2Te3 or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.

Fabrication and characterization of dye sensitized solar cell using natural dyes

2019 ◽  
Vol 12 ◽  
pp. 665-670 ◽  
Author(s):  
Charu Pathak ◽  
Karan Surana ◽  
Vivek Kumar Shukla ◽  
Pramod K. Singh
Keyword(s):  
Solar Cell ◽  
Natural Dyes ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized ◽  
Fabrication And Characterization

High Performance IGZO TFTs with Modified Etch Stop Structure on Glass Substrates

2014 ◽  
Vol 1633 ◽  
pp. 95-100
Author(s):  
Forough Mahmoudabadi ◽  
Ta-Ko Chuang ◽  
Jerry Ho Kung ◽  
Miltiadis K. Hatalis
Keyword(s):  
Annealing Time ◽  
High Performance ◽  
Channel Length ◽  
Device Performance ◽  
Current Ratio ◽  
Glass Substrates ◽  
Etch Stop ◽  
Current Threshold ◽  
Fabrication And Characterization

ABSTRACTIn this paper, we present fabrication and characterization of RF sputtered a-IGZO TFTs having a modified etch stopper structure with source/drain contact windows on glass wafers. The effect of annealing time and channel length on device performance in terms of mobility, on/off current ratio, average off current, threshold voltage, and sub threshold slope is reported.

Fabrication and Characterization of GaAs Tunnel Diode and ErAs Nanoparticles Enhanced GaAs Tunnel Diode for Multijunction Solar Cell

2014 ◽  
Vol 1602 ◽  
Author(s):  
Tomah Sogabe ◽  
Yasushi Shoji ◽  
Mitsuyoshi Ohba ◽  
Naito Shunya ◽  
Naoya Miyashita ◽  
...  
Keyword(s):  
Hysteresis Loop ◽  
Contact Area ◽  
Tunnel Diode ◽  
Enhancement Effect ◽  
Peak Current Density ◽  
Gaas Sample ◽  
Load Line ◽  
Current Voltage ◽  
Fabrication And Characterization

ABSTRACTWe report here the fabrication and characterization of GaAs tunnel diode (TD) and ErAs nanoparticles (Nps) enhanced GaAs TD. Four GaAs TDs with different contact area were fabricated by using MOCVD. We found extremely high peak current density of ∼250A/cm2 for the TD with r=0.25mm contact area. Moreover a hysteresis loop was appeared during sweeping up and sweeping down the external voltage. A ‘vector load line model’ was proposed to explain the origin of the shape of the hysteresis loop and the onset of the bistability occurred at the intersect of the loadline and the current-voltage (I-V) curve of TD. Meanwhile, we have grown ErAs Nps on GaAs(100) surface by using MBE and succeeded in overgrowth of GaAs after ErAs deposition. GaAs(p+)/ErAs(Nps)/GaAs(n+) TDs were fabricated and characterized. We found the GaAs sample containing 70s deposition of ErAs showed the best TD behavior. No TD behavior was observed for the sample without addition of ErAs Nps, clearly indicating the strong tunneling enhancement effect from ErAs Nps.

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