scholarly journals Electric-field-tunable linear unipolar magnetic switch based on a spin-valve multiferroic heterostructure

2021 ◽  
Vol 2132 (1) ◽  
pp. 012040
Author(s):  
Mengli Liu ◽  
Wei Du ◽  
Hua Su ◽  
Bo Liu ◽  
Hao Meng ◽  
...  
Keyword(s):  
Electric Fields ◽  
Energy Efficient ◽  
Giant Magnetoresistance ◽  
Magnetic Moments ◽  
Spin Valve ◽  
Switching Field ◽  
Magnetic Switch ◽  
Magnetization Direction ◽  
Field Range ◽  
Multiferroic Heterostructure

Abstract This work reports an energy-efficient strategy for realizing linear unipolar giant magnetoresistance (GMR) switch by using electric fields (E-fields). Herein, a modified spin-valve (SV) structure of double antiferromagnetic (AFM) pinning layers was adopted. Since the magnetization direction of ferromagnetic (FM) layer can be controlled via the strain-mediated magnetoelectric (ME) effect, a multiferroic heterostructure of SV/PMN-PT was fabricated. By applying an E-field on the PMN-PT substrate, an effective magnetic field Heff was produced along the [1-10] direction of PMN-PT. It can turn the magnetic moments of FM layer toward [1-10] direction. Accordingly, a linear GMR curve with a wide sensing field range was achieved. This E-field-induced linear magnetic switch can satisfy the demand for different switching field ranges in the same application system.

scholarly journals Giant magnetoresistance ratio in a current-perpendicular-to-plane spin valve based on an inverse Heusler alloy Ti2NiAl

2019 ◽  
Vol 10 ◽  
pp. 1658-1665
Author(s):  
Yu Feng ◽  
Zhou Cui ◽  
Bo Wu ◽  
Jianwei Li ◽  
Hongkuan Yuan ◽  
...  
Keyword(s):  
Transmission Coefficient ◽  
Heusler Alloy ◽  
Giant Magnetoresistance ◽  
Magnetic Moments ◽  
Heusler Alloys ◽  
Spin Valve ◽  
Total Transmission ◽  
Higher Spin ◽  
Magnetoresistance Ratio ◽  
Current Perpendicular To Plane

A Ti2NiAl inverse Heusler alloy based current-perpendicular-to-plane (CPP) spin valve (SV) with various kinds of atomic terminated interfaces has been designed to explore the potential application of Heusler alloys in spintronics devices. By performing first principles calculations combined with the nonequilibrium Green’s function, it is revealed that spin magnetic moments of interfacial atoms suffer a decrease, and the electronic structure shows that the TiNiB-terminated structure possesses the largest interface spin polarization of ≈55%. Our study on spin-transport properties indicates that the total transmission coefficient at the Fermi level mainly comes from the contribution from the spin up electrons, which are regarded as the majority of the spin electrons. When the two electrodes of the CPP-SV device are in parallel magnetization configuration, the interface containing Ti and Ni atoms possesses a higher spin up transmission coefficient than the interface containing Ti and Al atoms. The device with the TiNiB-terminated interface possesses the largest magnetoresistance ratio of 3.28 × 105, and it has great application potential in spintronics devices.

Which spin valve for next giant magnetoresistance head generation? (invited)

2000 ◽  
Vol 87 (9) ◽  
pp. 5377-5382 ◽  
Author(s):  
Satoru Araki ◽  
Masashi Sano ◽  
Shuxiang Li ◽  
Yoshihiro Tsuchiya ◽  
Olivier Redon ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve

Low resistance spin-valve-type current-perpendicular-to-plane giant magnetoresistance with Co75Fe25

2005 ◽  
Vol 97 (10) ◽  
pp. 10C507 ◽  
Author(s):  
Ken-ichi Aoshima ◽  
Nobuhiko Funabashi ◽  
Kenji Machida ◽  
Yasuyoshi Miyamoto ◽  
Kiyoshi Kuga
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Low Resistance ◽  
Current Perpendicular To Plane

Sensitivity enhancement of a giant magnetoresistance alternating spin-valve sensor for high-field applications

2012 ◽  
Vol 111 (7) ◽  
pp. 07E504 ◽  
Author(s):  
Seungha Yoon ◽  
Youngman Jang ◽  
Chunghee Nam ◽  
Seungkyo Lee ◽  
Joonhyun Kwon ◽  
...  
Keyword(s):  
High Field ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Sensitivity Enhancement

Time Dependent Magnetic Switching in Spin Valve Structures

1995 ◽  
Vol 384 ◽  
Author(s):  
J. B. Restorff ◽  
M. Wun-Fogle ◽  
S. F. Cheng ◽  
K. B. Hathaway
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Time History ◽  
Time Dependent ◽  
Si Substrates ◽  
Magnetic Switching ◽  
Magnetic Aftereffect ◽  
Magnetron Sputter Deposition ◽  
History Of ◽  
Time Required

ABSTRACTWe have observed time dependent magnetic switching in spin-valve sandwich structures of Cu/Co/Cu/Fe films grown on silicon and Kapton substrates and Permalloy/Co/Cu/Co films grown on NiO or NiO/CoO coated Si substrates. The giant magnetoresistance (MR) values ranged from 1 to 3 percent at room temperature. The films were grown by DC magnetron sputter deposition. Measurements were made on the time required for the MR to stabilize to about 1 part in 104 after the applied field was incremented. This time depends almost linearly on the amplitude of the timedependent MR change with a slope (time / ΔMR) of 20 000 to 30 000 s. Some samples took as long as 70 s to stabilize. The time dependent effects may be important for devices operating in these regions of the magnetoresistance curve. In addition, measurements were made on the time history of the MR value for a period of 75 s following a step change in the field from saturation. We observed that the time dependent behavior of the MR values of both experiments produced an excellent fit to a function of the form ΔMR(t) = α + β;ln(t) where ɑ and β are constants. This time dependence was consistent with the behavior of the magnetic aftereffect.

Giant magnetoresistance in 60–150-nm-wide pseudo-spin-valve nanowires

2002 ◽  
Vol 81 (15) ◽  
pp. 2809-2811 ◽  
Author(s):  
F. J. Castaño ◽  
S. Haratani ◽  
Y. Hao ◽  
C. A. Ross ◽  
Henry I. Smith
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve
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