Modelling of epitaxial growth of two-dimensional film

Abstract The study is devoted to the theory of epitaxial growth of two-dimensional materials (in particular, the group IV elements) and its applications in creating a virtual program for modeling this growth by the molecular beam epitaxy (MBE) method.

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Molecular beam epitaxy fabrication of two-dimensional materials

2D Semiconductor Materials and Devices ◽

10.1016/b978-0-12-816187-6.00004-2 ◽

2020 ◽

pp. 103-134 ◽

Cited By ~ 1

Author(s):

Peng Cheng ◽

Wen Zhang ◽

Lei Zhang ◽

Jian Gou ◽

Ping Kwan Johnny Wong ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Two Dimensional ◽

Two Dimensional Materials

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Engineering Epitaxial Silicene on Functional Substrates for Nanotechnology

Research ◽

10.34133/2019/8494606 ◽

2019 ◽

Vol 2019 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Carlo Grazianetti ◽

Alessandro Molle

Keyword(s):

Molecular Beam Epitaxy ◽

Periodic Table ◽

Molecular Beam ◽

Condensed Matter ◽

Single Element ◽

Condensed Matter Physics ◽

High Momentum ◽

Two Dimensional ◽

Optical Techniques ◽

Two Dimensional Materials

Two-dimensional materials are today a solid reality in condensed matter physics due to the disruptive discoveries about graphene. The class of the X-enes, namely, graphene-like single element artificial crystals, is quickly emerging driven by the high-momentum generated by silicene. Silicene, in addition to the graphene properties, shows up incidentally at the end of Moore’s law debate in the electronic era. Indeed, silicene occurs as the crafted shrunk version of silicon long yearned by device manufacturers to improve the performances of their chips. Despite the periodic table kinship with graphene, silicene and the X-enes must deal with the twofold problem of their metastable nature, i.e., the stabilization on a substrate and out of vacuum environment. Synthesis on different substrates and deep characterization through electronic and optical techniques of silicene in the early days have been now following by the tentative steps towards reliable integration of silicene into devices. Here, we review three paradigmatic cases of silicene grown by molecular beam epitaxy showing three different possible applications, aiming at extending the exploitation of silicene out of the nanoelectronics field and thus keeping silicon a key player in nanotechnology, just in a thinner fashion.

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Growth of Quaternary AlInGaN/GaN Heterostructures by Plasma Assisted MBE

MRS Proceedings ◽

10.1557/proc-743-l4.5 ◽

2002 ◽

Vol 743 ◽

Author(s):

E. Monroy ◽

N. Gogneau ◽

D. Jalabert ◽

F. Enjalbert ◽

E. Bellet-Amalnc ◽

...

Keyword(s):

Binding Energy ◽

Molecular Beam Epitaxy ◽

Substrate Temperature ◽

Epitaxial Growth ◽

Mole Fraction ◽

Molecular Beam ◽

Growth Front ◽

Two Dimensional ◽

High Binding Energy ◽

Dimensional Growth

ABSTRACTEpitaxial growth of quaternary AlGalnN compounds by plasma-assisted molecular beam epitaxy has been demonstrated. Two-dimensional growth is achieved under In excess, with a monolayer of In segregating at the growth front. The maximum In incorporation is significantly affected by the substrate temperature and the Al mole fraction of the alloy. This behavior has been attributed to the enhancement of In segregation due to the high binding energy of A1N compared to InN and GaN.

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Growth and Decay of Germanium Islands on Silicon Studied by High Temperature Stm

MRS Proceedings ◽

10.1557/proc-583-155 ◽

1999 ◽

Vol 583 ◽

Author(s):

M. Kästner ◽

B. Voigtländer

Keyword(s):

High Temperature ◽

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Scanning Tunneling Microscope ◽

Strain Energy ◽

Molecular Beam ◽

Three Dimensional ◽

Scanning Tunneling ◽

Two Dimensional ◽

Tunneling Microscope

AbstractWe use a scanning tunneling microscope (STM) capable of imaging the growing layer at high temperature during molecular beam epitaxy (MBE) to study the epitaxial growth of Germanium on Silicon and the decay of Ge islands. The periodicity of the (2×N) reconstruction of two-dimensional Ge layers on Si(001) is measured as function of the Ge coverage. Strain energy drives the formation of the (2×N) reconstruction and Si/Ge intermixing. A comparison to total energy calculations predicting the periodicity of the (2×N) reconstruction is used to estimate the amount of Si-Ge intermixing near the surface. The evolution of the size and shape of individual “hut clusters” is measured and explained by kinetically self-limiting growth. The relaxation of kinetically a determined morphology towards equilibrium is followed for a Ge layer on Si(111). Strained two-dimensional as well as partially relaxed three-dimensional islands dissolve and are soaked up by larger three-dimensional islands which are dislocated and therefore fully relaxed.

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