Low-temperature, ultrahigh-vacuum tip-enhanced Raman spectroscopy combined with molecular beam epitaxy for in situ two-dimensional materials’ studies

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

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Two-dimensional growth of ZnO epitaxial films on c-Al2O3 (0001) substrates with optimized growth temperature and low-temperature buffer layer by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.10.016 ◽

2005 ◽

Vol 274 (3-4) ◽

pp. 418-424 ◽

Cited By ~ 33

Author(s):

Yeon-Sik Jung ◽

Oleg Kononenko ◽

Jin-Sang Kim ◽

Won-Kook Choi

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Buffer Layer ◽

Growth Temperature ◽

Molecular Beam ◽

Epitaxial Films ◽

Two Dimensional ◽

Dimensional Growth

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Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

CrystEngComm ◽

10.1039/c4ce01607f ◽

2014 ◽

Vol 16 (46) ◽

pp. 10721-10727 ◽

Cited By ~ 5

Author(s):

Fangliang Gao ◽

Lei Wen ◽

Yunfang Guan ◽

Jingling Li ◽

Xiaona Zhang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Buffer Layer ◽

Molecular Beam ◽

Strain Relaxation ◽

Si Substrate ◽

Structural Perfection ◽

High Degree

The as-grown In0.53Ga0.47As epi-layer grown on Si substrate by using low-temperature In0.4Ga0.6As buffer layer with in-situ annealing is of a high degree of structural perfection.

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Engineering Epitaxial Silicene on Functional Substrates for Nanotechnology

Research ◽

10.34133/2019/8494606 ◽

2019 ◽

Vol 2019 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Carlo Grazianetti ◽

Alessandro Molle

Keyword(s):

Molecular Beam Epitaxy ◽

Periodic Table ◽

Molecular Beam ◽

Condensed Matter ◽

Single Element ◽

Condensed Matter Physics ◽

High Momentum ◽

Two Dimensional ◽

Optical Techniques ◽

Two Dimensional Materials

Two-dimensional materials are today a solid reality in condensed matter physics due to the disruptive discoveries about graphene. The class of the X-enes, namely, graphene-like single element artificial crystals, is quickly emerging driven by the high-momentum generated by silicene. Silicene, in addition to the graphene properties, shows up incidentally at the end of Moore’s law debate in the electronic era. Indeed, silicene occurs as the crafted shrunk version of silicon long yearned by device manufacturers to improve the performances of their chips. Despite the periodic table kinship with graphene, silicene and the X-enes must deal with the twofold problem of their metastable nature, i.e., the stabilization on a substrate and out of vacuum environment. Synthesis on different substrates and deep characterization through electronic and optical techniques of silicene in the early days have been now following by the tentative steps towards reliable integration of silicene into devices. Here, we review three paradigmatic cases of silicene grown by molecular beam epitaxy showing three different possible applications, aiming at extending the exploitation of silicene out of the nanoelectronics field and thus keeping silicon a key player in nanotechnology, just in a thinner fashion.

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The Research on the Complexity of 1T-TaS2 at Ultra-low Temperatures

Journal of Physics Conference Series ◽

10.1088/1742-6596/2152/1/012002 ◽

2022 ◽

Vol 2152 (1) ◽

pp. 012002

Author(s):

Tianxue Han

Keyword(s):

Phase Transition ◽

Low Temperature ◽

Density Wave ◽

Transition Metal Dichalcogenide ◽

Two Dimensional ◽

Angle Resolved Photoemission Spectroscopy ◽

Two Dimensional Materials ◽

Metal Evaporation ◽

Metal Phase Transition

Abstract Graphene, as a successfully industrialized two-dimensional material, has greatly promoted the development of other two-dimensional materials, such as transition metal dichalcogenide (TMDs). 1T-TaS2 is a classical TMDs material, which presents metallicity at high temperature. It undergoes a variety of charge density wave (CDW) phase transitions during the temperature declining process, and presents insulating properties at low temperature. During the temperature rise period, 1T-TaS2 goes through a phase transition, from an energy band insulator to Mott insulator, followed by an insulation-metal phase transition. The complexity of 1T-TaS2 phase diagram encourages researchers to conduct extensive research on it. This paper, via means of resistance, magnetic susceptibility and other technical methods, finds out that the ultra-low temperature of 1T-TaS2 suggests additional complexity. In addition, with the angle resolved photoemission spectroscopy (ARPES) technique of in-situ alkali metal evaporation, this paper proposes that the 1T-TaS2 ultra-low temperature ground state may exist a combination of state and surface state. Our findings provide more experimental evidence for the physical mechanism of this system.

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