scholarly journals Lande factor of the conduction electrons in silicon: temperature dependence

2011 ◽  
Vol 324 ◽  
pp. 012027 ◽  
Author(s):  
A A Konakov ◽  
A A Ezhevskii ◽  
A V Soukhorukov ◽  
D V Guseinov ◽  
S A Popkov ◽  
...  
2007 ◽  
Vol 142 (6) ◽  
pp. 342-345 ◽  
Author(s):  
N. Fraj ◽  
S. Ben Radhia ◽  
K. Boujdaria

2017 ◽  
Vol 16 (04) ◽  
pp. 1750034 ◽  
Author(s):  
Ferdinand Grüneis

Inspired by the phenomenon of fluorescence intermittency in quantum dots and other materials, we introduce small off-states (intermissions) which interrupt the generation and recombination (= [Formula: see text]–[Formula: see text]) process in a semiconductor material. If the remaining on-states are power-law distributed, we find an almost pure 1/[Formula: see text] spectrum. Besides well-known [Formula: see text]–[Formula: see text] noise, we obtain two 1/[Formula: see text] noise components which can be attributed to the intermittent generation and recombination process. These components can be given the form of Hooge's relation with a Hooge coefficient [Formula: see text] describing the contribution of the generation and recombination process, respectively. Herein, the coefficients [Formula: see text] and [Formula: see text] describe impact of intermissions which in general are different for the generation and recombination process. The impact of [Formula: see text]–[Formula: see text] noise on 1/[Formula: see text] noise is comprised in the coefficient [Formula: see text] for the generation and [Formula: see text] for the recombination process. These coefficients are specified for an intrinsic and a slightly extrinsic semiconductor as well as for a semiconductor with traps; for the latter, the temperature dependence of 1/[Formula: see text] noise is also investigated. 1/[Formula: see text] noise is shown to be inversely related to the number of neutral and ionized [Formula: see text]-atoms rather than to the number of conduction electrons as defined in Hooge's relation. As a possible origin of 1/[Formula: see text] noise in semiconductors, electron–phonon scattering is suggested.


1993 ◽  
Vol 47 (20) ◽  
pp. 13937-13940 ◽  
Author(s):  
E. E. Mendez ◽  
J. Nocera ◽  
W. I. Wang

1982 ◽  
Vol 90 (6) ◽  
pp. 476-480 ◽  
Author(s):  
R.S. Ferber ◽  
A.I. Okunevich ◽  
O.A. Shmit ◽  
M.Ya. Tamanis

1993 ◽  
Vol 138 ◽  
pp. 300-304 ◽  
Author(s):  
Gautier Mathys ◽  
John D. Landstreet ◽  
Thierry Lanz

AbstractAp stars whose spectral lines are resolved in several magnetically split components are of particular interest, because their magnetic field can be diagnosed with unrivalled precision, in an essentially approximation-free manner. We are pursuing a systematic programme of search and study of such stars. At present 25 of them are known, of which 13 have been discovered in the course of the present project (Mathys 1990, hereafter Paper I; Mathys & Lanz 1992, hereafter Paper II; this paper).Up to now, we have obtained observations of 22 of these Ap stars with resolved magnetically split lines. We have recorded high-resolution spectra of a region containing, among others, the three lines Cr ɪɪ λ6147.154, Fe ɪ λ6147.741, and Fe II λ 6149.258. The Zeeman patterns of these three lines are, respectively, close to a triplet, close to a quadruplet, and a doublet. The doublet Fe ɪɪ λ 6149.258 is particularly interesting, because of its large Landé factor (2.7): it can be resolved even in stars with fairly modest fields.


Sign in / Sign up

Export Citation Format

Share Document