Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)

2006 ◽  
Vol 527-529 ◽  
pp. 799-802
Author(s):  
Masataka Satoh ◽  
Tomoyuki Suzuki
Keyword(s):  
Ion Implantation ◽  
Concentration Dependence ◽  
Impurity Concentration ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Phosphorus Concentration ◽  
Recrystallization Process ◽  
Substitutional Impurity ◽  
P Concentration

The impurity concentration dependence of the recrystallization rate of phosphorus implanted 4H-SiC(11-20) has been investigated by means of Rutherford backscattering spectrometry in the annealing temperature range from 660 to 720 oC . The phosphorus ions were multiply implanted to form the implantation layer with the thickness of 200 nm and the phosphorus concentration of 1 x 1020, 4 x 1020, or 1 x 1021 /cm3, respectively. The recrystallization rate of the P ion implantation-induced amorphous layer in 4H-SiC(11-20) increases with an activation energy of 3.4 eV as does the case of the Ar ion implantation-induced amorphous layer in 6H-SiC(11-20) and (1-100). As the P concentration is increased from 1 x 1020 to 1 x 1021 /cm3, the recrystallization rate is enhanced from 3.5 to about 5nm/min, while the recrystallization rate for the Ar implantationinduced amorphous layer was 1.5 nm/min. It is suggested that the recrystallization process is enhanced by the presence of the substitutional impurity at the amorphous-crystalline interface during the recrystallization.

scholarly journals Genetic variation of seed phosphorus concentration in winter oilseed rape and development of a NIRS calibration

Euphytica ◽  
2021 ◽  
Vol 217 (4) ◽  
Author(s):  
Jakob Eifler ◽  
Jürgen Enno Wick ◽  
Bernd Steingrobe ◽  
Christian Möllers
Keyword(s):  
Genetic Variation ◽  
Field Experiments ◽  
Seed Quality ◽  
Rapeseed Meal ◽  
Quality Analysis ◽  
Phosphorus Concentration ◽  
Genotypic Differences ◽  
Organic P ◽  
P Concentration ◽  
Total P

AbstractPhytic acid is the major organic phosphorus storage compound in rapeseed. Following oil extraction, the defatted meal is used in feed mixtures for livestock. However, monogastric pigs and chickens can only poorly metabolize phytate. Hence, their excrements are rich in phosphorus (P), which when applied as manure may lead to eutrophication of surface waters. The aim of the present study was to analyze the genetic variation for total and organic P concentration (i.e. mainly phytate) in rapeseed and to compare the results with soybean. Two sets of rapeseed material were tested in field experiments in different environments with varying soil P levels and harvested seeds were used for seed quality analysis. Results revealed significant genotypic differences in total seed P concentration, which ranged from 0.47 to 0.94%. Depending on the experiment, the heritability for total P concentration ranged from 52 to 93%. The organic P portion of total P concentration was above 90% for current rapeseed hybrids. In both sets, there was a significant positive correlation between seed protein and P concentration. A NIRS calibration for total P concentration in intact seeds showed in cross validation a standard error of 0.05% and a coefficient of determination of R2 = 0.83. Total P concentration of soybean seeds and meal was between 0.55 and 0.65%, and around 1.1% for rapeseed meal. Rapeseed meal had a twofold higher ratio of total P to nitrogen concentration as compared to soybean which could be considered adverse when the meal is used for feeding livestock.

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation

1998 ◽  
Vol 80 (1-4) ◽  
pp. 235-239 ◽  
Author(s):  
Tsutomu Shimizu-Iwayama ◽  
David E Hole ◽  
Peter D Townsend
Keyword(s):  
Ion Implantation ◽  
Concentration Dependence

Raman Spectra of Ion Implanted Graphite

1981 ◽  
Vol 7 ◽  
Author(s):  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Lattice Order ◽  
Annealing Temperatures ◽  
High Fluences ◽  
Lattice Damage ◽  
The Way

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

The Vacancy Generation Influence on the Initial Stage of Ion Implantation

2015 ◽  
Vol 1097 ◽  
pp. 29-34
Author(s):  
E.S. Parfenova ◽  
Anna G. Knyazeva
Keyword(s):  
Surface Layer ◽  
Ion Implantation ◽  
Metal Surface ◽  
Impurity Concentration ◽  
Coupled Model ◽  
Irreversible Processes ◽  
Concentration Profiles ◽  
Thermodynamics Of Irreversible Processes ◽  
Vacancy Generation ◽  
Initial Stage

The coupled model is presented to describe the elements penetration into the surface layer of metal during the process of ion implantation. Mechanical stresses arising due to the interaction of particles with the surface affect the redistribution of the implanted impurity. In addition, the existence of vacancies in the metal surface and their generation under the stresses influence are taken into account. The kinetic law is written on the basis of the thermodynamics of irreversible processes. The solution had been found numerically. As a result, the distributions of impurity concentration and deformations have been obtained for various time moments. The comparison of the concentration profiles with vacancies and without their have been given.

scholarly journals Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

2006 ◽  
Vol 27 (4) ◽  
pp. 205-207 ◽  
Author(s):  
F. Recht ◽  
L. McCarthy ◽  
S. Rajan ◽  
A. Chakraborty ◽  
C. Poblenz ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Gan Hemts ◽  
Activation Annealing

Fast Determination of Phosphorus Concentration in Phosphogypsum Waste Using Calibration-Free LIBS in Air and Helium

2021 ◽  
Author(s):  
Khaled Elsayed ◽  
Walid Tawfik ◽  
Ashraf E M Khater ◽  
Tarek S Kayed ◽  
Mohamed Fikry
Keyword(s):  
Complete Analysis ◽  
Phosphorus Concentration ◽  
Stark Broadening ◽  
Breakdown Spectroscopy ◽  
P Concentration ◽  
Characteristic Lines ◽  
Laser Induced Breakdown ◽  
Novel Method ◽  
Calibration Free

Abstract This work represents a novel method to determine phosphorus (P) concentration in phosphogypsum (PG) waste samples using calibration-free laser-induced breakdown spectroscopy (LIBS). A 50 mJ Q-switched Nd: YAG laser has generated the PG LIBS spectrum. Spectroscopic analysis of plasma evolution has been characterized by electron density Ne and electron temperature Te using the emission intensity and stark broadening for P I characteristic lines 213.61, 214.91, and 215.40 nm under non-purged (air) and purged (helium) conditions. It was found that both Te and Ne have significant changes linearly with P concentrations 4195, 5288, 6293, and 6905 ppm. The values of plasma Te and Ne increased from about 6900 to 10000 K and 1.1×1017 to 3.4×1017 cm− 3, respectively, for the non-purged PG. On the other hand, Te and Ne ranged from 8200 to 11000 K and 1.4×1017 to 3.5×1017 cm− 3, respectively, for the PG purged with helium. It is concluded that Te and Ne values represent a fingerprint plasma characterization for a given P concentration in PG samples, which can be used to identify P concentration without a PG's complete analysis. These results demonstrate a new achievement in the field of spectrochemical analysis of environmental applications.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

SYNTHESIS OF ALLOY METAL NANOCLUSTERS IN SILICA GLASS BY SEQUENTIAL ION IMPLANTATION

2007 ◽  
Vol 06 (06) ◽  
pp. 423-430 ◽  
Author(s):  
B. JOSEPH ◽  
H. P. LENKA ◽  
P. K. KUIRI ◽  
D. P. MAHAPATRA ◽  
R. KESAVAMOORTHY
Keyword(s):  
Ion Implantation ◽  
Silica Glass ◽  
Metallic Nanoparticles ◽  
Rutherford Backscattering Spectrometry ◽  
Low Frequency ◽  
Peak Position ◽  
Negative Ion ◽  
Metal Nanoclusters ◽  
Cross Sectional ◽  
The Matrix

High fluence low energy negative ion implantation has been used to synthesize embedded metal nanoclusters of Au , Ag and Sb in silica glass. The Au - and Ag -implanted samples showed peaks, corresponding to surface plasmon resonance (SPR) in the optical absorption (OA) spectra, confirming the formation of metallic nanoparticles in the matrix. No SPR peak was observed in case of Sb -implanted samples which is attributed to the absence of pure metallic precipitates which could be detected in the OA spectrum. Low frequency Raman scattering (LFRS) measurements also confirm this. Cross-sectional transmission electron microscopy has been used to infer about the size distribution of the nanoparticles. Sequential implantations of Au and Ag or Au and Sb have been found to result in SPR peaks at locations in between those for nanoparticles of the constituent atoms, indicating the formation of alloy nanoparticles in the system. In case of the Au + Ag system, Rutherford backscattering spectrometry has been used to infer about the composition of the nanoparticles in terms of the concentrations of the metallic constituents. A direct, one-to-one correspondence between the SPR peak position and composition has been observed.

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