scholarly journals Erratum: Measurements with silicon detectors at extreme neutron fluences[Work performed in the framework of the CERN-RD50 collaboration.]

2021 ◽  
Vol 16 (03) ◽  
pp. E03001
Author(s):  
I. Mandić ◽  
V. Cindro ◽  
A. Gorišek ◽  
B. Hiti ◽  
G. Kramberger ◽  
...  
Keyword(s):  
Silicon Detectors ◽  
Neutron Fluences

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Crystallographic Characterization of Dislocation Loops in Irradiated Tungsten

1968 ◽  
Vol 26 ◽  
pp. 290-291
Author(s):  
Robert C. Rau
Keyword(s):  
Electron Microscope ◽  
Ambient Temperature ◽  
Dislocation Loops ◽  
Polycrystalline Specimen ◽  
Post Irradiation ◽  
Neutron Fluences

Previous work has shown that post-irradiation annealing, at temperatures near 1100°C, produces resolvable dislocation loops in tungsten irradiated to fast (E > 1 MeV) neutron fluences of about 4 x 1019 n/cm2 or greater. To crystallographically characterize these loops, tilting experiments were carried out in the electron microscope on a polycrystalline specimen which had been irradiated to 1.5 × 1021 n/cm2 at reactor ambient temperature (∼ 70°C), and subseouently annealed for 315 hours at 1100°C. This treatment produced large loops averaging 1000 Å in diameter, as shown in the micrographs of Fig. 1. The orientation of this grain was near (001), and tilting was carried out about axes near [100], [10] and [110].

Resistivity variations in ion implanted silicon detectors

2003 ◽  
Author(s):  
H.A. Rijken ◽  
S.S. Klein ◽  
W.C.M. Ligthart ◽  
M.J.A. de Voigt ◽  
P. Burger
Keyword(s):  
Silicon Detectors ◽  
Ion Implanted

Neutron fluences and dose equivalents measured with passive detectors on LDEF

1996 ◽  
Vol 26 (6) ◽  
pp. 833-839 ◽  
Author(s):  
A.L. Frank ◽  
E.V. Benton ◽  
T.W. Armstrong ◽  
B.L. Colborn
Keyword(s):  
Neutron Fluences

Nuclear reaction mesurements with 1H, 2H, 3He and 4He incident on silicon detectors

1970 ◽  
Vol 88 (1) ◽  
pp. 17-27 ◽  
Author(s):  
T.R. King ◽  
J.J. Kraushaar ◽  
R.A. Ristinen ◽  
Rodman Smythe ◽  
D.M. Stupin
Keyword(s):  
Nuclear Reaction ◽  
Silicon Detectors

Radiation hard cryogenic silicon detectors

2002 ◽  
Vol 477 (1-3) ◽  
pp. 299-303 ◽  
Author(s):  
L. Casagrande ◽  
M.C. Abreu ◽  
W.H. Bell ◽  
P. Berglund ◽  
W. de Boer ◽  
...  
Keyword(s):  
Silicon Detectors ◽  
Radiation Hard

Development of large area silicon detectors for calorimetrics applications

1991 ◽  
Vol 23 (1) ◽  
pp. 107-113
Author(s):  
P.G. Fallica ◽  
S. Cannavò ◽  
L. Fragapane ◽  
S. Musumeci ◽  
G. Ferla
Keyword(s):  
Silicon Detectors ◽  
Large Area

Self annealing effect on neutron irradiated silicon detectors investigated by TSC analysis

1995 ◽  
Vol 44 (1-3) ◽  
pp. 488-495 ◽  
Author(s):  
U. Biggeri ◽  
E. Borchi ◽  
M. Bruzzi ◽  
S.J. Bates ◽  
M. Glaser ◽  
...  
Keyword(s):  
Annealing Effect ◽  
Silicon Detectors
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