On the infrared singularity of the effective electromagnetic field of free electrons

A radiofrequency gaseous detection device is proposed for use with instruments employing charged particle beams, such as electron microscopes and ion beam technologies, as well as for detection of ionizing radiations as in proportional counters. An alternating (oscillating) electromagnetic field in the radiofrequency range is applied in a gaseous environment of the instrument. Both the frequency and amplitude of oscillation are adjustable. The electron or ion beam interacts with a specimen and releases free electrons in the gas. Similarly, an ionizing radiation source releases free electrons in the gas. The free electrons are acted upon by the alternating electromagnetic field and undergo an oscillatory motion resulting in multiple collisions with the gas molecules, or atoms. At sufficiently low pressures, the oscillating electrons also collide with surrounding walls. These processes result in an amplified electron signal and an amplified photon signal in a controlled discharge. The amplified signals, which are proportional to the initial number of free electrons, are collected by suitable means for further processing and analysis.

Download Full-text

Radiofrequency Gaseous Detection Device

Microscopy and Microanalysis ◽

10.1007/s100059910001 ◽

2000 ◽

Vol 6 (1) ◽

pp. 12-20

Author(s):

Gerasimos D. Danilatos

Keyword(s):

Electromagnetic Field ◽

Ion Beam ◽

Free Electrons ◽

Particle Beams ◽

Charged Particle Beams ◽

Multiple Collisions ◽

Electron Microscopes ◽

Ionizing Radiations ◽

Low Pressures ◽

Photon Signal

Abstract A radiofrequency gaseous detection device is proposed for use with instruments employing charged particle beams, such as electron microscopes and ion beam technologies, as well as for detection of ionizing radiations as in proportional counters. An alternating (oscillating) electromagnetic field in the radiofrequency range is applied in a gaseous environment of the instrument. Both the frequency and amplitude of oscillation are adjustable. The electron or ion beam interacts with a specimen and releases free electrons in the gas. Similarly, an ionizing radiation source releases free electrons in the gas. The free electrons are acted upon by the alternating electromagnetic field and undergo an oscillatory motion resulting in multiple collisions with the gas molecules, or atoms. At sufficiently low pressures, the oscillating electrons also collide with surrounding walls. These processes result in an amplified electron signal and an amplified photon signal in a controlled discharge. The amplified signals, which are proportional to the initial number of free electrons, are collected by suitable means for further processing and analysis.

Download Full-text

An interpretation of the infrared singularity of the effective electromagnetic field

EPL (Europhysics Letters) ◽

10.1209/0295-5075/92/61001 ◽

2010 ◽

Vol 92 (6) ◽

pp. 61001 ◽

Cited By ~ 1

Author(s):

K. A. Kazakov ◽

V. V. Nikitin

Keyword(s):

Electromagnetic Field ◽

Infrared Singularity

Download Full-text

Another View on the Electric Charge, Spin, and Radiation of Free Electrons in an Electromagnetic Field

Physics Essays ◽

10.4006/1.3025583 ◽

2003 ◽

Vol 16 (3) ◽

pp. 279-342

Author(s):

Hoa Van Nguyen

Keyword(s):

Electromagnetic Field ◽

Electric Charge ◽

Free Electrons

Download Full-text

Dynamic studies of silicide-mediated crystallization of amorphous silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131395 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1352-1353

Author(s):

C. Hayzelden ◽

J. L. Batstone

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Metallic Phase ◽

Single Crystal Substrate ◽

Free Electrons ◽

Melt Temperature ◽

Transmission Electron ◽

Crystal Substrate ◽

High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Download Full-text