scholarly journals Effect Annealing Temperature on the Physical Properties of Cadmium Sulphide thin Films Deposited by using Thermal Evaporation Technique

Author(s):  
Jumaa Mohammed ◽  
Jasim M. Abbas ◽  
Falah I. Mustafa
2010 ◽  
Vol 7 (4) ◽  
pp. 1416-1420
Author(s):  
Baghdad Science Journal

InSb alloy was prepared then InSb:Bi films have been prepared successfully by thermal evaporation technique on glass substrate at Ts=423K. The variation of activation energies(Ea1,Ea2)of d.c conductivity with annealing temperature (303, 373, 423, 473, 523 and 573)K were measured, it is found that its values increases with increasing annealing temperature. To show the type of the films, the Hall and thermoelectric power were measured. The activation energy of the thermoelectric power is much smaller than for d.c conductivity and increases with increasing annealing temperature .The mobility and carrier concentration has been measured also.


2012 ◽  
Vol 510-511 ◽  
pp. 177-185 ◽  
Author(s):  
N. Ali ◽  
M.A. Iqbal ◽  
S.T. Hussain ◽  
M. Waris ◽  
S.A. Munair

The substrate temperature in depositions of thin films plays a vital role in the characteristics of deposited films. We studied few characteristics of cadmium sulphide thin film deposited at different temperature (150°C-300°C) on corning 7059 glass substrate. We measured transmittance, absorbance, band gap and reflectance via UV spectroscopy. It was found that the transmittance for 300nm to 1100nm was greater than 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 cm and 2-60 cm2V-1S-1 respectively. The thermoelectric properties of the film were measured by hot and cold probe method which shows the N-type nature of the film.


2011 ◽  
Vol 83 (6) ◽  
pp. 065706 ◽  
Author(s):  
Arshad Mahmood ◽  
Shaista R ◽  
A Shah ◽  
U Aziz ◽  
E Ahmed ◽  
...  

2013 ◽  
Vol 652-654 ◽  
pp. 371-374
Author(s):  
Jing Lv

Al films (about 40 nm) were prepared on quartz substrates by thermal evaporation technique, and subsequently annealed in air for 1h at temperature ranging from 600 to 1300oC. The characteristics of the annealed films were investigated in this paper. The measurement results of XRD and Raman show that crystalline phase transformations of the annealed films will convert from γ, γ and α, up to α-Al2O3 with the increasing of the annealing temperature at 600 oC, 1200 oC, to 1300oC. AFM and transmission spectra reveal the effects of phase transformations on their morphology and optical properties.


Open Physics ◽  
2005 ◽  
Vol 3 (1) ◽  
Author(s):  
Abraham Varghese ◽  
C. Menon

AbstractThin films of mixed of Copper Phthalocyanine (CuPc) and Nickel Phthalocyanine (NiPc) are deposited onto a pure glass substrate by a simultaneous thermal evaporation technique at room temperature. The material D.C. electrical conductivity of films at room temperature and also films annealed at 523 K has been investigated. The optical absorption and band gaps of the films are also measured. The results show that the electrical resistance is lower for the mixed films compared with the pure samples and also the optical band gap decreases for the mixed samples compared to the pure samples.


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