Characteristics of Self-Nanostructured Growth of 4,6-Bis(3,5-di(pyridin-3-yl)phenyl)-2-Methylpyrimidine (B3PyMPM)

In this study, we report the self-nanostructured growth of 4,6-bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine (B3PyMPM), which is widely used as an electron transport layer for organic light-emitting diodes (OLEDs). B3PyMPM nanostructures were formed on the surface of a substrate using vacuum thermal evaporation, and parameters such as substrate rotation speed and evaporation angle were altered to study their effect on the growth of nanostructures. Moreover, it was proven that the growth of nanostructures was dependent on the underneath materials. This self-nanostructured growth of B3PyMPM would affect the outcoupling and the efficiency improvement of OLEDs.

Compositional, Structural and Morphological Analyses of Bulk GeS Alloy and its Thin Films

Bulk Germanium monosulphide (GeS) alloy was synthesized using the usual melt-quenching technique. Its grains were used as the source material to deposit thin films by vacuum thermal evaporation. Thin-films samples were doped with 1, 2, and 3 at.% indium by thermal co-evaporation and annealed in a vacuum at temperatures 373, 473 and 550 K for an hour. Compositional, structural, and morphological properties of the bulk GeS alloy and its thin films were investigated by Energy Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM) techniques. The analyses verified the stoichiometry (GeS) of the starting material in the prepared thin films. They also revealed that the thin films under study are amorphous, homogeneous, without any cracks deposited uniformly on the glass substrate with thickness 650 to 700 nm.