Novel technique for fabrication of n-type crystalline silicon selective emitter for solar cell processing

2019 ◽  
Vol 6 (7) ◽  
pp. 075523 ◽  
Author(s):  
Baishakhi Pal ◽  
Soma Ray ◽  
Utpal Gangopadhyay ◽  
Partha Pratim Ray
2017 ◽  
Vol 4 (14) ◽  
pp. 12684-12688
Author(s):  
Baishakhi Pal ◽  
Soma Ray ◽  
Sukhendu Jana ◽  
Sayan Das ◽  
Utpal Gangopadhyay ◽  
...  

2007 ◽  
Vol 994 ◽  
Author(s):  
Yongkook Park ◽  
Jinggang Lu ◽  
G. A. Rozgonyi

AbstractTwo cast multi-crystalline silicon (mc-Si) sister wafers before and after solar cell processing were investigated to explore the gettering effect in low and high density structural defect regions. For the processed wafer, the minority carrier recombination lifetime was correlated to the structural defect distribution. For the low density region of as-grown wafer, Cr impurities were 3.28x1013cm-3 and they were reduced to 1.74×1012cm−3 for the processed wafer. The isolated Cr impurities dissolved from the precipitates at 900°C which is the typical gettering temperature in the solar cell processing are getterd effectively in the low density regions. Our current understanding for the gettering effect in the high density regions is that the segregated Cr impurities at defect sites are not released to the silicon matrix at 900°C resulting in the poor gettering effect.


2012 ◽  
Vol 7 (1) ◽  
pp. 410 ◽  
Author(s):  
Kyuwan Song ◽  
Bonggi Kim ◽  
Hoongjoo Lee ◽  
Youn-Jung Lee ◽  
Cheolmin Park ◽  
...  

2014 ◽  
Vol 63 (6) ◽  
pp. 068801
Author(s):  
Jia Xiao-Jie ◽  
Ai Bin ◽  
Xu Xin-Xiang ◽  
Yang Jiang-Hai ◽  
Deng You-Jun ◽  
...  

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