A Simulation Study on the Shallow Emitter Sheet Resistance for Selective Emitter Crystalline Silicon Solar Cell with Screen Printed Etched Back Process

2013 ◽  
Vol 10 (8) ◽  
pp. 1767-1771
Author(s):  
Jaewoo Choi ◽  
Kyuwan Song ◽  
Nagarajan Balaji ◽  
Cheolmin Park ◽  
Minkyu Ju ◽  
...  
2012 ◽  
Vol 7 (1) ◽  
pp. 410 ◽  
Author(s):  
Kyuwan Song ◽  
Bonggi Kim ◽  
Hoongjoo Lee ◽  
Youn-Jung Lee ◽  
Cheolmin Park ◽  
...  

2014 ◽  
Vol 20 (3) ◽  
pp. 545-550 ◽  
Author(s):  
Kyeom Seon Do ◽  
Tae-hyeon Baek ◽  
Min Gu Kang ◽  
Sung Jin Choi ◽  
Gi Hwan Kang ◽  
...  

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.


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