Electronic structure of 2D and 3D systems

Author(s):  
Enric Canadell ◽  
Marie-Liesse Doublet ◽  
Christophe Iung
2005 ◽  
Vol 12 (1-2) ◽  
pp. 455-461
Author(s):  
E. G. Gal'pern ◽  
A. R. Sabirov ◽  
I. V. Stankevich ◽  
L. A. Chernozatonskii ◽  
A. L. Chistiakov

2004 ◽  
Vol 630 (15) ◽  
pp. 2587-2598 ◽  
Author(s):  
E. Betranhandy ◽  
Samir F. Matar ◽  
Ch. El-Kfoury ◽  
R. Weihrich ◽  
J. Etourneau

ChemInform ◽  
2005 ◽  
Vol 36 (11) ◽  
Author(s):  
E. Betranhandy ◽  
S. F. Matar ◽  
Ch. El-Kfoury ◽  
R. Weihrich ◽  
J. Etourneau

Author(s):  
P.M. Rice ◽  
MJ. Kim ◽  
R.W. Carpenter

Extrinsic gettering of Cu on near-surface dislocations in Si has been the topic of recent investigation. It was shown that the Cu precipitated hetergeneously on dislocations as Cu silicide along with voids, and also with a secondary planar precipitate of unknown composition. Here we report the results of investigations of the sense of the strain fields about the large (~100 nm) silicide precipitates, and further analysis of the small (~10-20 nm) planar precipitates.Numerous dark field images were analyzed in accordance with Ashby and Brown's criteria for determining the sense of the strain fields about precipitates. While the situation is complicated by the presence of dislocations and secondary precipitates, micrographs like those shown in Fig. 1(a) and 1(b) tend to show anomalously wide strain fields with the dark side on the side of negative g, indicating the strain fields about the silicide precipitates are vacancy in nature. This is in conflict with information reported on the η'' phase (the Cu silicide phase presumed to precipitate within the bulk) whose interstitial strain field is considered responsible for the interstitial Si atoms which cause the bounding dislocation to expand during star colony growth.


Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.


Author(s):  
J. Fink

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.


2019 ◽  
Vol 21 (44) ◽  
pp. 24478-24488 ◽  
Author(s):  
Martin Gleditzsch ◽  
Marc Jäger ◽  
Lukáš F. Pašteka ◽  
Armin Shayeghi ◽  
Rolf Schäfer

In depth analysis of doping effects on the geometric and electronic structure of tin clusters via electric beam deflection, numerical trajectory simulations and density functional theory.


2021 ◽  
Author(s):  
Ruoyang Liu ◽  
Ke Tian Tan ◽  
Yifan Gong ◽  
Yongzhi Chen ◽  
Zhuoer Li ◽  
...  

Covalent organic frameworks offer a molecular platform for integrating organic units into periodically ordered yet extended 2D and 3D polymers to create topologically well-defined polygonal lattices and built-in discrete micropores and/or mesopores.


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