Molecular Basis for a Simple, Specific Test for S Hemoglobin: the Murayama Test

1970 ◽  
Vol 16 (11) ◽  
pp. 945-950 ◽  
Author(s):  
Robert M Nalbandian ◽  
Raymond L Henry ◽  
Bruce M Nichols ◽  
Frank R Camp ◽  
Paul L Wolf
Keyword(s):  
Molecular Basis ◽  
Close Agreement ◽  
Negative Temperature Coefficient ◽  
Sol Gel ◽  
Negative Temperature ◽  
Globin Chain ◽  
Temperature Dependent ◽  
Diagnostic Laboratory ◽  
Specific Test ◽  
Hemoglobin C

Abstract The Murayama test, a new, specific test for S hemoglobin, is based on the molecular mechanism of sickling for S hemoglobin proposed by Murayama [Clin. Chem. 14, 578 (1967)]. The test depends on a feature of molecular structure: hydrophobic bonds formed between interacting tetramers by the no. 6 valine, which is substituted for glutamic acid near the N-terminal end of each β S globin chain. Existence of these particular hydrophobic bonds is manifested in deoxygenated, concentrated hemolysates by reversible sol— gel transformations at 0° and 37°C. In such systems, demonstration of reversible, temperature-dependent sol—gel transformations (a negative temperature coefficient of gelation) is specific for S hemoglobin or the S structural variant, hemoglobin C (Harlem). The test is simple, has clear endpoints, will detect both homozygous and heterozygous S hemoglobin, and is specific. A practical approach is suggested to the precise identification of S and non-S sickling hemoglobins in the diagnostic laboratory. The close agreement between Murayama’s hypothesis for sickling in S hemoglobin and our results with 29 cases of S hemoglobin and 37 controls further support his views.

scholarly journals Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Intrinsic Properties ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Layer Graphene ◽  
A Value ◽  
Few Layer Graphene

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

scholarly journals Effect of Al3+ Substitution On Magnetic and DC Electrical Resistivity Properties of NiZnCu Nanoferrites

2021 ◽  
Author(s):  
N MURALI
Keyword(s):  
Electrical Resistivity ◽  
Negative Temperature Coefficient ◽  
Sol Gel ◽  
Combustion Process ◽  
Negative Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Auto Combustion ◽  
Ft Ir ◽  
Resultant Material

Abstract Al substituted Ni0.4Zn0.35Cu0.25Fe2-xAlxO4 (x = 0.00, 0.05, 0.10, 0.15, 0.20) samples is synthesized using the sol-gel auto-combustion process. X-ray diffraction shows its cubic spinel structure. The lattice constant decreases as the Al3+ content increases. The sizes of the crystallites are also decreasing in the range of 32.15 nm to 22.89 nm. The wavenumbers of tetrahedral and octahedral sites sighted in the FT-IR spectra are similar to that of the precursor. The increment in the Al3+ content increases the DC conductivity. The electrical resistivity decrease with an increase in the temperature, i.e., it has a negative temperature coefficient with resistance similar to semiconductors. VSM results show their isotropic nature forming single domain ferrimagnetic particles. The resultant material is widely significant, as indicated by its result.

scholarly journals Effect of Cu Substitution on Magnetic and DC Electrical Resistivity Properties of Ni-Zn Nano Ferrites

2021 ◽  
Author(s):  
K. Chandramouli ◽  
P. Anantha Rao ◽  
B. Suryanarayana ◽  
Vemuri Raghavendra ◽  
D. Parajuli ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Negative Temperature Coefficient ◽  
Sol Gel ◽  
Combustion Process ◽  
Negative Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Content ◽  
Auto Combustion ◽  
Resultant Material

Abstract Cu substituted Ni0.5Zn0.5-xCuxFe2O4 (x = 0, 0.1, 0.2, 0.3 and 0.4) samples is synthesized using the sol-gel auto-combustion process. X-ray diffraction shows its cubic spinel structure. The lattice constant decreases as the Cu content increases. The sizes of the crystallites are also decreasing in the range of 42.68 nm to 21.75 nm. The wavenumbers of tetrahedral and octahedral sites sighted in the FTIR spectra are similar to that of the precursor. The increment in the copper content increases the DC conductivity. The electrical resistivity decrease with increase in the temperature, i.e. it has a negative temperature coefficient with resistance similar to semiconductors. The remnant ratios R obtained from VSM show their isotropic nature forming single domain ferrimagnetic particles. The resultant material is widely significant, as indicated by its result.

scholarly journals DC Electrical Resistivity and Magnetic Properties of Co Substituted NiCuZn Nano Ferrite

2021 ◽  
Author(s):  
Kanta Jayadev ◽  
M. K. Raju ◽  
N MURALI ◽  
Parajuli D ◽  
K. Samatha
Keyword(s):  
Electrical Resistivity ◽  
Negative Temperature Coefficient ◽  
Sol Gel ◽  
Combustion Process ◽  
Negative Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Octahedral Sites ◽  
Auto Combustion ◽  
Resultant Material

Abstract Co substituted Ni0.3-xCoxCu25Zn0.45Fe2O4 (x = 0, 0.05, 0.1, 0.15 and 0.2) samples is synthesized using the sol-gel auto-combustion process. X-ray diffraction shows its cubic spinel structure. The lattice constant decreases as the Co content increases. The sizes of the crystallites are in the range of 20.18–26.24 nm. The wavenumbers of tetrahedral and octahedral sites sighted in the FTIR spectra are similar to that of the precursor. The increment on the Co content increases the DC conductivity. The electrical resistivity decrease with increase in the temperature, i.e. it has a negative temperature coefficient with resistance similar to semiconductors. The remnant ratios R obtained from VSM show their isotropic nature forming single domain ferrimagnetic particles. The resultant material is widely significant, as indicated by its result.

Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

2018 ◽  
Vol 1 (1) ◽  
pp. 21-25
Author(s):  
R Revathi ◽  
R Karunathan
Keyword(s):  
Thin Films ◽  
Negative Temperature Coefficient ◽  
Thermal Evaporation ◽  
Structural Parameters ◽  
Negative Temperature ◽  
Resistivity Measurements ◽  
Allowed Transition ◽  
Evaporation Technique ◽  
Indium Telluride ◽  
Made In

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

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