Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

2018 ◽  
Vol 1 (1) ◽  
pp. 21-25
Author(s):  
R Revathi ◽  
R Karunathan
Keyword(s):  
Thin Films ◽  
Negative Temperature Coefficient ◽  
Thermal Evaporation ◽  
Structural Parameters ◽  
Negative Temperature ◽  
Resistivity Measurements ◽  
Allowed Transition ◽  
Evaporation Technique ◽  
Indium Telluride ◽  
Made In

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

Study of Structural and Optical Properties of Non-Oxide Se90Cd10–xSbx(2 ≤ x ≤ 8) Chalcogenide Thin Films

2020 ◽  
Vol 12 (1) ◽  
pp. 116-119
Author(s):  
Nitesh Shukla ◽  
Pravin Kumar Singh ◽  
H. P. Pathak ◽  
D. K. Dwivedi
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Optical Characterization ◽  
Structural And Optical Properties ◽  
Allowed Transition ◽  
Clean Glass Substrate ◽  
Amorphous Nature ◽  
Evaporation Technique ◽  
The Impact

Thin films of Se90Cd10–xSbx (2 ≤ x ≤ 8) of thickness 0.4 microns were prepared on ultra-clean glass substrate by thermal evaporation technique. The vacuum level was 10–6 torr. This paper intends to investigate the impact of Sb concentration on the optical characterization. XRD measurement has been done to investigate the Structural characterization of the prepared thin films. XRD result indicates the prepared thin have amorphous nature. To analyze the optical characterization of the thin films the absorption spectra were recorded over 400–1100 nm wavelength range. In the present study the optical absorption follows direct allowed transition. An increase in photon energy causes an increase in absorption coefficient while extinction coefficient has been found to increase with an increase in frequency of the photons i.e., deceases with increase of wavelength. Optical bandgap (Eg) of thin films have been studied and an increase in it has been recorded with increasing Sb concentration.

scholarly journals STRUCTURAL ANALYSIS OF ZINC OXIDE THIN FILMS PREPARED BY THERMAL EVAPORATION TECHNIQUE

2017 ◽  
Vol 4 (3) ◽  
pp. 7-9
Author(s):  
Balaganesh A.s ◽  
Chandar Shekar B
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Structural Analysis ◽  
Thermal Evaporation ◽  
Structural Parameters ◽  
Xrd Analysis ◽  
Zno Films ◽  
Thermal Evaporation Technique ◽  
Oxide Thin Films ◽  
Evaporation Technique

Zinc oxide thin films of 800nm were successfully prepared by thermal evaporation technique. XRD analysis revealed polycrystalline nature of the as prepared ZnO films. The structural parameters such as crystallite size, dislocation density and micro strain were evaluated and discussed.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Ellipsometric analysis of Cd1−xZnxSe thin films prepared by a thermal evaporation technique

2011 ◽  
Vol 83 (6) ◽  
pp. 065706 ◽  
Author(s):  
Arshad Mahmood ◽  
Shaista R ◽  
A Shah ◽  
U Aziz ◽  
E Ahmed ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Evaporation Technique

Electrical conductivity studies of mixed phthalocyanine thin films

Open Physics ◽  
2005 ◽  
Vol 3 (1) ◽  
Author(s):  
Abraham Varghese ◽  
C. Menon
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Copper Phthalocyanine ◽  
Thermal Evaporation Technique ◽  
Nickel Phthalocyanine ◽  
Mixed Films ◽  
Evaporation Technique

AbstractThin films of mixed of Copper Phthalocyanine (CuPc) and Nickel Phthalocyanine (NiPc) are deposited onto a pure glass substrate by a simultaneous thermal evaporation technique at room temperature. The material D.C. electrical conductivity of films at room temperature and also films annealed at 523 K has been investigated. The optical absorption and band gaps of the films are also measured. The results show that the electrical resistance is lower for the mixed films compared with the pure samples and also the optical band gap decreases for the mixed samples compared to the pure samples.

A New Series Of Al-Pd-Based Ordered Icosahedral Quasicrystals And Their Electrical Resistivities

1998 ◽  
Vol 553 ◽  
Author(s):  
R Tamura ◽  
T Asao ◽  
M Tamura ◽  
S Takeuchif ◽  
T Shibuya
Keyword(s):  
Electronic Transport ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Resistivity Ratio ◽  
X Ray ◽  
Resistivity Measurements ◽  
Annealing Temperatures ◽  
Electrical Resistivities ◽  
Icosahedral Quasicrystals

AbstractX-ray measurements on samples of Al-Pd-(Fe,Ru,Os) systems with various annealing temperatures and times have been performed in order to gain insights into formations of icosahedral (I) phases and related approximants and to produce single phases of them. As a result, well ordered I phases have been obtained in Al-Pd-(Ru,Os) systems when annealed at 1000 °C for several hours. Formations of the (1/0-1/0-1/0) and the (2/1-2/1-2/1) approximants have been observed in wide compositional ranges in Al-Pd-(Fe,Ru,Os) and Al-Pd-(Ru,Os) systems, respectively. Electrical resistivity measurements of I phases and related approximants are performed as a function of temperature. The resistivity of I phases at room temperature is as high as that of highly resistive I phases such as Al-Pd-Mn and AI-Cu-(Fe,Ru) systems and the resistivity ratio (P12K/P300K) reaches about 1.5 in Al-Pd-Ru I phases. A negative temperature coefficient of the resistivity is observed in (1/0-1/0-1/0) approximants of Al-Pd-(Fe,Ru) systems, which indicates the electronic transport is quite anomalous even in the lowest approximant of the I phase.

Sign in / Sign up

Export Citation Format

Share Document