scholarly journals Phased cell division in a natural population of Dinophysis sacculus and the in situ measurement of potential growth rate

1997 ◽  
Vol 19 (12) ◽  
pp. 2067-2077 ◽  
Author(s):  
E. Garcés ◽  
M. Delgado ◽  
J. Camp
Keyword(s):  
Growth Rate ◽  
Cell Division ◽  
Natural Population ◽  
In Situ Measurement ◽  
Potential Growth

IN SITU MEASUREMENT OF CRYSTAL GROWTH RATE ON THE HAP COATING BY QUARTZ CRYSTAL MICROBALANCE METHOD

Bioceramics ◽  
1999 ◽  
Author(s):  
D. Kokubu ◽  
J. Hamagami ◽  
K. Kanamura ◽  
T. Umegaki ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Quartz Crystal Microbalance ◽  
Quartz Crystal ◽  
Crystal Growth Rate ◽  
In Situ Measurement

In-situ measurement of growth rate by laser diffraction during CdTe single crystal growth from the vapour phase

1995 ◽  
Vol 147 (3-4) ◽  
pp. 399-402 ◽  
Author(s):  
Bailiang Yang ◽  
M. Isshiki ◽  
Chuanping Zhang ◽  
Ximin Huang ◽  
Xiling Yu
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Single Crystal ◽  
Vapour Phase ◽  
Single Crystal Growth ◽  
Laser Diffraction ◽  
In Situ Measurement ◽  
Cdte Single Crystal

In situ measurement of crystal growth rate of zeolite

Zeolites ◽  
1995 ◽  
Vol 15 (4) ◽  
pp. 308-314 ◽  
Author(s):  
A. Iwasaki ◽  
M. Hirata ◽  
I. Kudo ◽  
T. Sano ◽  
S. Sugawara ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Crystal Growth Rate ◽  
In Situ Measurement

Thermal Oxidation of Silicon: In Situ Measurement of the Growth Rate Using Ellipsometry

1975 ◽  
Vol 122 (9) ◽  
pp. 1216-1222 ◽  
Author(s):  
M. A. Hopper ◽  
R. A. Clarke ◽  
L. Young
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
In Situ Measurement

In situ measurement of the growth rate of YBa2Cu3Ox single crystals

1999 ◽  
Vol 197 (1-2) ◽  
pp. 379-382 ◽  
Author(s):  
D.K Aswal ◽  
M Shinmura ◽  
Y Hayakawa ◽  
M Kumagawa
Keyword(s):  
Growth Rate ◽  
Single Crystals ◽  
In Situ Measurement

The threshold energy for atom displacement in fcc metals

1990 ◽  
Vol 48 (4) ◽  
pp. 530-531
Author(s):  
Wilfried Sigle ◽  
Matthias Hohenstein ◽  
Alfred Seeger
Keyword(s):  
Growth Rate ◽  
Elevated Temperatures ◽  
Threshold Energy ◽  
Dislocation Loops ◽  
Absolute Minimum ◽  
Voltage Electron ◽  
Atom Displacement ◽  
Electron Microscopes ◽  
Fcc Metal

Prolonged electron irradiation of metals at elevated temperatures usually leads to the formation of large interstitial-type dislocation loops. The growth rate of the loops is proportional to the total cross-section for atom displacement,which is implicitly connected with the threshold energy for atom displacement, Ed . Thus, by measuring the growth rate as a function of the electron energy and the orientation of the specimen with respect to the electron beam, the anisotropy of Ed can be determined rather precisely. We have performed such experiments in situ in high-voltage electron microscopes on Ag and Au at 473K as a function of the orientation and on Au as a function of temperature at several fixed orientations.Whereas in Ag minima of Ed are found close to <100>,<110>, and <210> (13-18eV), (Fig.1) atom displacement in Au requires least energy along <100>(15-19eV) (Fig.2). Au is thus the first fcc metal in which the absolute minimum of the threshold energy has been established not to lie in or close to the <110> direction.

IN SITU LASER ASSISTED DIAGNOSTICS ON GROWTH RATE OF THICK PACVD ORGANOSILICON FILMS

2005 ◽  
Vol 9 (2) ◽  
pp. 287-297 ◽  
Author(s):  
P. Supiot ◽  
C. Vivien ◽  
M. Aimard ◽  
R. Sumera ◽  
B. Bocquet
Keyword(s):  
Growth Rate
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