Thermal Conductivity, Electrical Resistivity, and Seebeck Coefficient of Silicon from 100 to 1300°K

1968 ◽  
Vol 167 (3) ◽  
pp. 765-782 ◽  
Author(s):  
W. Fulkerson ◽  
J. P. Moore ◽  
R. K. Williams ◽  
R. S. Graves ◽  
D. L. McElroy
2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.


2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.


2013 ◽  
Vol 1490 ◽  
pp. 3-8 ◽  
Author(s):  
Dimas S. Alfaruq ◽  
James Eilertsen ◽  
Philipp Thiel ◽  
Myriam H Aguirre ◽  
Eugenio Otal ◽  
...  

AbstractThe thermoelectric properties of W-substituted CaMn1-xWxO3-δ (x = 0.01, 0.03; 0.05) samples, prepared by soft chemistry, were investigated from 300 K to 1000 K and compared to Nb-substituted CaMn0.98Nb0.02O3-δ. All compositions exhibit both an increase in absolute Seebeck coefficient and electrical resistivity with temperature. Moreover, compared to the Nb-substituted sample, the thermal conductivity of the W-substituted samples was strongly reduced. This reduction is attributed to the nearly two times greater mass of tungsten. Consequently, a ZT of 0.19 was found in CaMn0.97W0.03O3-δ at 1000 K, which was larger than ZT exhibited by the 2% Nb-doped sample.


Author(s):  
Velimir Jovanovic ◽  
Saeid Ghamaty ◽  
Norbert B. Elsner ◽  
Daniel Krommenhoek ◽  
John C. Bass

New nano-structured thermoelectric (TE) materials have been developed and fabricated that have much higher conversion efficiencies than the state-of-the-art (SOTA) bulk thermoelectrics. In these new quantum well (QW) materials, the carrier and barrier materials (in this case SiGe and Si) are confined in alternating layers less than 10 nm thick, and this confinement has been shown to result in greatly improved TE properties (Seebeck coefficient, electrical resistivity and thermal conductivity) leading to higher TE Figure of Merit, ZT, conversion efficiencies and Coefficient of Performance (COP) for cooling applications than for SOTA thermoelectrics. From the most recent QW test data, ZTs greater than 3 at room temperature have been obtained which constitutes a significant improvement over the SOTA bulk thermoelectrics which have ZTs less than 1. QW materials have the best measured TE power factor (Seebeck coefficient squared divided by electrical resistivity) and, combined with low thermal conductivity substrates, should provide very high efficiency TE modules. The QW TE materials with ZTs greater than 3 lead to conversion efficiencies greater than 20 percent, which allows for much wider commercial applications, particularly in the applications such as the waste-heat recovery from truck engines, refrigeration, and air conditioning, where the SOTA bulk TE modules were shown to be technically feasible but economically unjustified due to low conversion efficiencies. With higher efficiency QW materials, these applications become economically attractive. The above mentioned QW TE ZTs include the effect of the substrate which degrades the overall performance, and a new test technique was developed that eliminates the effect of the substrate and for just the QW films, ZTs greater than 6 have been measured. This illustrated the importance of using a low thermal conductivity substrate in order to achieve good TE performance. In a recent QW test, a conversion efficiency corresponding to 62 percent of the Carnot efficiency was measured and this is believed to be the highest such value ever measured for a TE material. For power generation applications, QW TE generators can be designed for capacities ranging from milliwatts to kilowatts and for cooling applications with capacities ranging from watts to several tons of refrigeration. The paper discusses the effects of the thermal and electrical contact resistances and of substrate thermal conductivity on the TE performance, the status of the prototype QW TE generators and coolers being designed and fabricated, and the latest test results.


2011 ◽  
Vol 1314 ◽  
Author(s):  
Takashi Itoh ◽  
Masashi Tachikawa

ABSTRACTCobalt triantimonide compounds are well known as materials with good thermoelectric properties over temperature range of 550-900 K. For further improving thermoelectric performance, reduction of thermal conductivity is required. In this study, we attempted to disperse carbon nanotubes (CNTs) homogeneously into the n-type CoSb3 compound for lowering lattice thermal conductivity by the phonon scattering. Powders of Co, Ni, Sb and Te were blended with molar ratios of n-type Co0.92Ni0.08Sb2.96Te0.04 compound, and the compound was synthesized through a pulse discharge sintering (PDS) process. After coarsely grinding the synthesized compound, CNTs were mixed with the compound powder at different mass% (0, 0.01, 0.05 and 0.1 mass%). Then, the mixture was mechanically ground with a planetary ball milling equipment. The ground composite powder was compacted and sintered by PDS. Thermoelectric properties (Seebeck coefficient, electrical resistivity and thermal conductivity) of the sintered samples were measured. It was confirmed that the fibrous CNTs existed homogeneously in the compound matrix. The absolute value of Seebeck coefficient slightly decreased with increase of CNT content. The minimum thermal conductivity was obtained at addition of 0.01mass%CNT, and the electrical resistivity was a little increased with CNT content. The maximum ZT of 0.98 was achieved at 853 K in the 0.01mass%CNT-added sample.


1984 ◽  
Vol 39 ◽  
Author(s):  
R. K. Williams ◽  
R. S. Graves ◽  
F. J. Weaver ◽  
D. L. McElroy

ABSTRACTThermal conductivity, electrical resistivity, Seebeck coefficient and thermal expansion data were obtained on well-annealed Ni3Al containing 24 and 25 at. % Al. The results span the temperature range 300 to 1000 K. The expansion coefficients did not vary with composition and increased with temperature, reaching values of aIout 17 × 10−6 K−1 at 1000 K. The thermal conductivity and electrical resistivity changed rapidly with composition, and the thermal conductivity of 24 at. % Al is as much as 30% lower than that for stoichiometric Ni3A1. The electronic Lorenz function of Ni3Al was obtained by subtracting the estimated phonon conductivity component and found to be within about 5% of the Sommerfeld prediction from 300 to 1000 K. The electrical resistivity results for stoichiometric Ni 3Al are influenced by the loss of ferromagnetic order at lower temperatures and are not adequately described by the Bloch-Grüneisen equation.


2016 ◽  
Vol 09 (01) ◽  
pp. 1650008 ◽  
Author(s):  
Le Deng ◽  
Li Bin Wang ◽  
Jie Ming Qin ◽  
Xiao Peng Jia ◽  
Hong An Ma

We prepared InxPbxCo4Sb[Formula: see text] by high-pressure and high-temperature (HPHT) method. Samples were characterized by X-ray diffraction (XRD), electron microprobe analysis and thermoelectric properties measurements. The Seebeck coefficient, electrical resistivity and thermal conductivity of InxPbxCo4Sb[Formula: see text] samples were all performed in the temperature range of 323–723[Formula: see text]K. With the increasing synthetic pressure, the Seebeck coefficient of In[Formula: see text]Pb[Formula: see text]Co4Sb[Formula: see text] samples, which synthesized between 1.5 GPa–2.3 GPa, showed an obvious increase while the thermal conductivity exhibited a substantial reduction.


2006 ◽  
Vol 980 ◽  
Author(s):  
Jung-Hwan Kim ◽  
Norihiko L. Okamoto ◽  
Kyosuke Kishida ◽  
Katsushi Tanaka ◽  
Haruyuki Inui

AbstractThe crystal structures and thermoelectric properties of Ba-Ge based type-III clathrate compounds in Ba-Al-Ge and Ba-In-Ge systems have been investigated as a function of Al and In content. The absolute values of electrical resistivity and Seebeck coefficient increase, while that of lattice thermal conductivity decreases with increasing Al and In content. The increase in electrical resistivity and Seebeck coefficient is discussed in terms of the number of the excess electrons deduced from the Zintl concept, on the other hand, the decrease in lattice thermal conductivity is discussed in terms of an anisotropic deformation of the open-dodecahedron cage encapsulating Ba atom. High ZT values of 0.74 and 0.87 are obtained at 780 and 580 °C for Ba24Al12Ge88 and Ba24In16Ge84, respectively.


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