Effect of temperature and alloying elements (Fe and Bi) on the electrical resistivity of Sn–0.7Cu solder alloy

The addition of Fe/Bi decrease the atomic percent of Sn4+, thus effect the electrical resistivity of the solder alloy.

XPS Study of Plasma Modified PVDF-TrFE Films Surface

The impact of surface plasma modification on PVDF-TrFE film with different exposure time was investigated using X-ray photoelectron spectroscopy (XPS). The main emphasis of this study was to optimize the exposure time of argon plasma on the surface of PVDF-TrFE films The surface of spin coated PVDF-TrFE film was modified with argon plasma at exposure time of 1, 3, 5, 7 and 9 min/s. Prior to modification, only small amount of atomic percent (1.92 %) of O1s peak was observed at 540.8 eV, but upon modification, the atomic percent for O1s peak was found to increase to 8.8 %. Meanwhile, the atomic percent for F1s peak observed at 695.3 eV was found to decrease from 70.6 % to 61.2 %. This phenomenon is an indication that plasma modified PVDF-TrFE films were readily oxidized. Importantly, most of the fluorine elements were removed from the modified PVDF-TrFE film surface, which rendered the film favourable for adhesion with other material for coating aplications.

Synthesis and Characterization of Nanocrystalline Ni50Al50−xMox (x = 0–5) Intermetallic Compound during Mechanical Alloying Process

Nanocrystalline Ni50Al50-xMox (x=0, 0.5, 1, 2.5, 5) intermetallic compound was produced through mechanical alloying of nickel, aluminum, and molybdenum powders. Powders produced from milling were analyzed using scanning electron microscopy (SEM) and X-ray diffractometry (XRD). Results showed that, with increasing the atomic percent of molybdenum, average grain size decreased from 3 to 0.5 μm. Parameter lattice and lattice strain increased with increasing the atomic percent of molybdenum, while the crystal structure became finer up to 10 nm. Also, maximum microhardness was obtained for NiAl49Mo1 alloy.

Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films

The ZnO and Mo:ZnO thin films were deposited by radio frequency magnetron sputtering on quartz and intrinsic silicon (100) substrates at a fixed combined partial pressure 1×10−2 mbar of Ar + O2 and substrate temperatures of 473 K and 673 K. The effect of Molybdenum doping on ZnO thin films with different Molybdenum concentrations (1-2 atomic percent) was studied with the help of structural and microstructural characterization techniques. The films deposited at a substrate temperature of 473 K exhibited strong c-axis orientation with predominant (002) peak. At 673 K, along with (002) orientation, other orientations (100), (101), (220), and (103) were also observed. Among these, the (220) peak indicates the cubic phase of ZnO. With increasing Molybdenum concentration, the cubic phase of ZnO disappeared, and the (002) orientation became strong and intense. The composition analysis reveals that the undoped ZnO films deposited at 473 K have oxygen deficiency, and the ratio of Zn/O is improved with increasing Mo atomic percent in ZnO. The surface morphological features reveal that the undoped ZnO films were found to be uniform and have grain size of around 30 nm. The optical energy gap of the undoped ZnO films is 3.05 eV and increases with increasing Mo concentration. The thickness of the films is around 456 nm.